IXTP3N110

IXTP3N110 Datasheet

IXTA/IXTP 3N120 IXTA/IXTP 3N110

Part	Datasheet
IXTP3N110	IXTP3N110 (pdf)

Related Parts	Information
IXTA3N110	IXTA3N110

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High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt IXTA/IXTP 3N120 IXTA/IXTP 3N110 VDSS ID25 1200 V 3 A 1100 V 3 A RDS on VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C 3N120 1200 3N110 1100 TJ = 25°C to 150°C RGS = 1 3N120 1200 3N110 1100 Continuous Transient ±20 ±30 TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C 150 -55 to +150 150 -55 to +150 V/ns W °C °C °C mm in from case for 10 s Mounting torque TO-220 Nm/lb.in. TO-220 TO-263 TO-220 IXTP TO-263 IXTA D TAB D TAB

PDF Datasheet Preview

High Voltage Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt

IXTA/IXTP 3N120 IXTA/IXTP 3N110

VDSS

ID25
1200 V 3 A
1100 V 3 A

RDS on

VDSS

VDGR

VGS VGSM ID25 IDM IAR EAR EAS dv/dt

PD TJ TJM Tstg TL Md Weight

Test Conditions

Maximum Ratings

TJ = 25°C to 150°C
3N120
1200
3N110
1100

TJ = 25°C to 150°C RGS = 1 3N120
1200
3N110
1100

Continuous Transient
±20
±30

TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C

TC = 25°C

IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C
150 -55 to +150
150 -55 to +150

V/ns

W °C °C °C
mm in from case for 10 s

Mounting torque TO-220

Nm/lb.in.

TO-220 TO-263

TO-220 IXTP

TO-263 IXTA

D TAB

D TAB

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Datasheet ID: IXTP3N110 644329