MT4HTF6464HZ-800H1

MT4HTF6464HZ-800H1 Datasheet

Base device MT47H64M8,1 512Mb DDR2 SDRAM

Part	Datasheet
MT4HTF6464HZ-800H1	MT4HTF6464HZ-800H1 (pdf)

Related Parts	Information
MT4HTF6464AZ-800H1	MT4HTF6464AZ-800H1
MT4HTF6464AZ-667H1	MT4HTF6464AZ-667H1

PDF Datasheet Preview
512MB, 1GB, 2GB x72, SR 240-Pin DDR2 SDRAM UDIMM Features DDR2 SDRAM UDIMM MT9HTF6472AZ 512MB MT9HTF12872AZ 1GB MT9HTF25672AZ 2GB • 240-pin, unbuffered dual in-line memory module • Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 512MB 64 Meg x 72 , 1GB 128 Meg x 72 , 2GB 256 Meg x 72 • VDD = VDDQ = 1.8V • VDDSPD = • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Multiple internal device banks for concurrent operation • Programmable CAS latency CL • Posted CAS additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths BL 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination ODT • Serial presence detect SPD with EEPROM • Gold edge contacts • Single rank Figure 1 240-Pin UDIMM MO-237 R/C F Module height 30mm 1.18in Options • Operating temperature1 Commercial 0°C TA +70°C Industrial TA +85°C • Package 240-pin DIMM halogen-free • Frequency/CL2 2.5ns CL = 5 DDR2-800 2.5ns CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667 Marking None I -80E -800 -667 Notes Contact Micron for industrial temperature module offerings. CL = CAS READ latency. Table 1 Key Timing Parameters Speed Industry Data Rate MT/s tRCD Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 -800 PC2-6400 -667 PC2-5300 -53E PC2-4200 -40E PC2-3200 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved.

PDF Datasheet Preview

512MB, 1GB, 2GB x72, SR 240-Pin DDR2 SDRAM UDIMM Features

DDR2 SDRAM UDIMM

MT9HTF6472AZ 512MB MT9HTF12872AZ 1GB MT9HTF25672AZ 2GB
• 240-pin, unbuffered dual in-line memory module
• Fast data transfer rates PC2-3200, PC2-4200,

PC2-5300, or PC2-6400
• 512MB 64 Meg x 72 , 1GB 128 Meg x 72 , 2GB 256 Meg x 72
• VDD = VDDQ = 1.8V
• VDDSPD =
• JEDEC-standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
operation
• Programmable CAS latency CL
• Posted CAS additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths BL 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination ODT
• Serial presence detect SPD with EEPROM
• Gold edge contacts
• Single rank

Figure 1 240-Pin UDIMM MO-237 R/C F

Module height 30mm 1.18in

Options
• Operating temperature1

Commercial 0°C TA +70°C Industrial TA +85°C
• Package 240-pin DIMM halogen-free
• Frequency/CL2 2.5ns CL = 5 DDR2-800 2.5ns CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667

Marking

None I
-80E -800 -667

Notes Contact Micron for industrial temperature module offerings.

CL = CAS READ latency.

Table 1 Key Timing Parameters

Speed

Industry

Data Rate MT/s
tRCD

Grade

Nomenclature

CL = 6

CL = 5

CL = 4

CL = 3
-80E

PC2-6400
-800

PC2-6400
-667

PC2-5300
-53E

PC2-4200
-40E

PC2-3200

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved.

More datasheets: AC164410 | AC164409 | AC164402 | AC164367 | MPC93H51FA | 63783-203 | 63783-103 | CA3102E18-9SB109 | MT4HTF6464AZ-800H1 | MT4HTF6464AZ-667H1

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Datasheet ID: MT4HTF6464HZ-800H1 648270