IXKP10N60C5M
IXKP10N60C5M Datasheet
IXKP 10N60C5M
| Part | Datasheet |
|---|---|
IXKP10N60C5M |
IXKP10N60C5M (pdf) |
| PDF Datasheet Preview |
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| IXKP 10N60C5M CoolMOS 1 Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Preliminary data ID25 VDSS = 600 V RDS on max = Ω TO-220 ABFP MOSFET VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = A TC = 25°C MOSFET dV/dt ruggedness VDS = V Maximum Ratings 600 V ± 20 225 mJ 50 V/ns RDSon VGS th IDSS IGSS Ciss Coss Qg Qgs Qgd td on tr td off tf RthJC Conditions Characteristic Values TVJ = 25°C, unless otherwise min. typ. max. VGS = 10 V ID = A VDS = VGS ID = mA VDS = 600 V VGS = 0 V VGS = ± 20 V VDS = 0 V VGS = 0 V VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10 V VDS = 400 V ID = A VGS = 10 V VDS = 400 V ID = A RG = Ω 350 385 mΩ 1 µA µA 100 nA 17 22 nC • Fast CoolMOS 1 power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching UIS • Fully isolated package |
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