IXGC12N60C
IXGC12N60C Datasheet
IXGC 12N60C IXGC 12N60CD1
| Part | Datasheet |
|---|---|
IXGC12N60C |
IXGC12N60C (pdf) |
| Related Parts | Information |
|---|---|
IXGC12N60CD1 |
IXGC12N60CD1 |
| PDF Datasheet Preview |
|---|
| ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT ISOPLUS247TM IXGC 12N60C IXGC 12N60CD1 Electrically Isolated Back Surface VCES = 600 V IC25 = VCE sat = tfi typ = 15 A V 55 ns Test Conditions VCES VCGR VGES VGEM IC25 IC90 ICM SSOA RBSOA TJ = 25°C to 150°C TJ = 25°C to 150°C RGE = 1 Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Clamped inductive load, L = 300 µH TJ TJM Tstg VISOL TC = 25°C Isolation Voltage Weight Maximum lead temperature for soldering mm in. from case for 10 s IXGC IXGC - CD1 Maximum Ratings ISOPLUS220TM E153432 ±20 ±30 48 ICM = 24 VCES 85 -40 +150 150 -40 +150 2500 2 Isolated back surface* A Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface °C °C - 2500V electrical isolation z Low collector to tab capacitance <35pF z 3rd generation HDMOSTM process |
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