APT60M60JFLL

APT60M60JFLL Datasheet

APT60M60JFLL

Part	Datasheet
APT60M60JFLL	APT60M60JFLL (pdf)

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APT60M60JFLL 600V 70A SOT-227 S POWER MOS 7 R FREDFET Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS by significantly lowering combines lower conduction and switching RDS ON losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. "UL Recognized" • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol Parameter VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation TC = 25°C Linear Derating Factor TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 STATIC ELECTRICAL CHARACTERISTICS All Ratings TC = 25°C unless otherwise specified. APT60M60JFLL UNIT Volts 70 Amps ±30 Volts ±40 Watts W/°C -55 to 150 300 70 °C Amps 50 mJ 3600 Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS RDS on

PDF Datasheet Preview

APT60M60JFLL
600V 70A

SOT-227 S

POWER MOS 7 R FREDFET

Power MOS is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed and Qg. Power MOS
with Power MOS by significantly lowering combines lower conduction and switching

RDS ON losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
"UL Recognized"
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
• FAST RECOVERY BODY DIODE

MAXIMUM RATINGS

Symbol Parameter

VDSS ID IDM VGS

VGSM

Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient

Total Power Dissipation TC = 25°C

Linear Derating Factor

TJ,TSTG TL IAR EAR EAS

Operating and Storage Junction Temperature Range

Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4

STATIC ELECTRICAL CHARACTERISTICS

All Ratings TC = 25°C unless otherwise specified.

APT60M60JFLL

UNIT

Volts
70 Amps
±30 Volts
±40

Watts

W/°C
-55 to 150 300 70
°C Amps
50 mJ
3600

Symbol Characteristic / Test Conditions

MIN TYP MAX

BVDSS RDS on

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Datasheet ID: APT60M60JFLL 648699