IXFT50N60P3
IXFT50N60P3 Datasheet
IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3
| Part | Datasheet |
|---|---|
IXFT50N60P3 |
IXFT50N60P3 (pdf) |
| Related Parts | Information |
|---|---|
IXFH50N60P3 |
IXFH50N60P3 |
IXFQ50N60P3 |
IXFQ50N60P3 |
| PDF Datasheet Preview |
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| Preliminary Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS IDM, VDD VDSS, TJ 150°C TC = 25°C 1.6mm 0.062in. from Case for 10s Plastic Body for 10 seconds Mounting Torque TO-247 & TO-3P TO-268 TO-3P TO-247 Maximum Ratings ± 30 ± 40 V/ns 1040 -55 +150 -55 +150 Nm/lb.in. Test Conditions TJ = 25°C Unless Otherwise Specified BVDSS VGS = 0V, ID = 1mA VGS th VDS = VGS, ID = 4mA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS on VGS = 10V, ID = • ID25, Note 1 Characteristic Values Min. Typ. Max. ±100 nA 25 uA 2 mA 145 mΩ VDSS = ID25 = RDS on 600V 50A 145mΩ |
| More datasheets: MDM-9PBSM7 | SDP8105-001 | QEE213 | 1259641635 | LTDL-TX12P01B | 8743004DKILFT | 8743004DKILF | MIKROE-2009 | DBMC-9X4P-J-K87 | IXFH50N60P3 |
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