IXFR80N10Q
IXFR80N10Q Datasheet
IXFR 80N10Q
| Part | Datasheet |
|---|---|
IXFR80N10Q |
IXFR80N10Q (pdf) |
| PDF Datasheet Preview |
|---|
| HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class IXFR 80N10Q Electrically Isolated Back Surface N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary Data Sheet VDSS = 100 V ID25 = 76 A = RDS on 15 mW trr 200 ns Symbol VDSS VDGR V VGSM ID25 IDM I EAR EAS dv/dt TJ TJM Tstg TL Md Weight VDSS V GS th I GSS IDSS RDS on Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM = 25°C TC = 25°C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150°C, RG = 2 W = 25°C mm in from case for 10 s Mounting torque Maximum Ratings ±20 ±30 V/ns 310 -55 +150 150 -55 +150 W °C °C °C °C Nm/lb.in. g Test Conditions VGS = 0 V, ID = 250 uA V = V , I = 4 mA ±20 V, DC VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Note 1 Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. |
| More datasheets: HUFA75842S3S | HUFA75842S3ST | HUFA75842P3 | SEP8736-001 | MDM-25PH003K | DDMMY50PM | IXGK50N60A2U1 | DCME-13W6P-K87 | DA15PA191 | SCEB08QF4 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IXFR80N10Q Datasheet file may be downloaded here without warranties.