IXGK50N60A2U1
IXGK50N60A2U1 Datasheet
IXGK 50N60A2U1 IXGX 50N60A2U1
| Part | Datasheet |
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IXGK50N60A2U1 |
IXGK50N60A2U1 (pdf) |
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| Advance Technical Information IGBT with Diode Low Saturation Voltage IGBT with Low Forward Drop Diode Preliminary Data Sheet IXGK 50N60A2U1 IXGX 50N60A2U1 VCES I VCE sat = 600 V = 75 A = V Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C RGE = 1 Continuous Transient IC25 TC = 25°C limited by leads IC110 TC = 110°C IF110 TC = 110°C 50N60A2D1 Diode TC = 25°C, 1 ms SSOA RBSOA TJ TJM Tstg Md Weight VGE = 15 V, TVJ = 125°C, RG = 10 Clamped inductive load VCE 600 V TC = 25°C Mounting torque TO-264 TO-264 PLUS247 Maximum lead temperature for soldering mm in. from case for 10 s Maximum Ratings ±20 ±30 ICM = 80 TO-264 IXGK PLUS247 IXGX G = Gate E = Emitter C = Collector Tab = Collector -55 +150 -55 +150 Nm/lb.in. • Low on-state voltage IGBT and anti-parallel diode in one package • High current handling capability • MOS Gate turn-on for drive simplicity • Lighting controls • Heating controls • AC/DC relays Test Conditions |
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