IXFR40N50Q2

IXFR40N50Q2 Datasheet

IXFR40N50Q2

Part	Datasheet
IXFR40N50Q2	IXFR40N50Q2 (pdf)

PDF Datasheet Preview
HiPerFETTM Power MOSFETs IXFR40N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr Preliminary Data Sheet VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient TC = 25°C TTCC 25°C, 25°C pulse width limited TTCC = 25°C = 25°C TISJ I1D5M0, °dCi/d, 100 =2 A/µs, VDSS, TC = 25°C mm in from case for 10 s Mounting force Maximum Ratings ±30 ±40 V/ns -55 +150 -55 +150 N/lb. VDSS VGS th IGSS IDSS RDS on Test Conditions Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA

PDF Datasheet Preview

HiPerFETTM Power MOSFETs

IXFR40N50Q2

N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr

Preliminary Data Sheet

VDSS VDGR VGS VGSM ID25 IDM IAR

EAR EAS
dv/dt

PD TJ TJM Tstg

Weight

Test Conditions

TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1

Continuous Transient

TC = 25°C

TTCC
25°C, 25°C
pulse
width
limited

TTCC
= 25°C = 25°C

TISJ

I1D5M0, °dCi/d,
100 =2

A/µs,

VDSS,

TC = 25°C
mm in from case for 10 s Mounting force

Maximum Ratings
±30
±40

V/ns
-55 +150
-55 +150

N/lb.

VDSS VGS th IGSS IDSS

RDS on

Test Conditions

Characteristic Values

TJ = 25°C, unless otherwise specified min. typ. max.

VGS = 0 V, ID = 250 µA

VDS = VGS, ID = 4 mA

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Datasheet ID: IXFR40N50Q2 644291