MIO1200-33E10
MIO1200-33E10 Datasheet
MIO 1200-33E10
| Part | Datasheet |
|---|---|
MIO1200-33E10 |
MIO1200-33E10 (pdf) |
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| MIO 1200-33E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 3300 V VCE sat typ. = V IGBT Symbol VCES VGES IC80 ICM tSC VCE sat VGE th ICES IGES tFeatures Conditions u VGE= 0 V o TC = 80°C - tp = 1 ms TC = 80°C VCC = 2500 V VCEM CHIP = < 3300 V; e VGE < 15 V TVJ < 125°C Maximum Ratings 3300 ± 20 1200 2400 a s Conditions Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. • IGBT - Low-loss - Smooth switching waveforms for good EMC • Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance • AC power converters for - industrial drives - windmills - traction • LASER pulse generator h IC = 1200 A VGE = 15 V TVJ = 25°C TVJ = 125°C p IC = 240 mA VCE = VGE VCE = 3300 V VGE = 0 V TVJ = 125°C 120 mA VCE = 0 V VGE = ± 20 V TVJ = 125°C 500 nA td on tr td off t Eoff Inductive load TVJ = 125°C VGE = ±15 V VCC = 1800 V IC = 1200 A RG = Ω; = 100 nH 1070 1890 1950 |
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