IXFN32N80P

IXFN32N80P Datasheet

IXFN32N80P

Part	Datasheet
IXFN32N80P	IXFN32N80P (pdf)

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN32N80P V = 800 V DSS I = 25 A RDS on 270 mΩ trr 250 ns V DSS VDGR VGSS VGSM ID25 I IAR E EAS dv/dt PD TJ T Tstg TL VISOL Weight Test Conditions = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MΩ Continuous Transient TC = 25°C = 25°C, pulse width limited by TC = 25°C = 25°C TC = 25°C I, DM di/dt A/us, V, DSS 150°C, TC = 25°C mm in. from case for 10 s 50/60 Hz, RMS t = 1 min ISOL t=1s Mounting torque Terminal connection torque Maximum Ratings miniBLOC, SOT-227 B IXFN E153432 ±30 ±40 A G = Gate

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PolarHVTM HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

IXFN32N80P

V = 800 V DSS

I = 25 A

RDS on 270 mΩ
trr 250 ns

V DSS

VDGR VGSS VGSM ID25 I

IAR E

EAS dv/dt

PD TJ T

Tstg TL VISOL

Weight

Test Conditions
= 25°C to 150°C

TJ = 25°C to 150°C RGS = 1 MΩ

Continuous

Transient

TC = 25°C
= 25°C, pulse width limited by

TC = 25°C
= 25°C

TC = 25°C

I, DM
di/dt

A/us,

V, DSS
150°C,

TC = 25°C
mm in. from case for 10 s
50/60 Hz, RMS
t = 1 min

ISOL
t=1s

Mounting torque Terminal connection torque

Maximum Ratings
miniBLOC, SOT-227 B IXFN E153432
±30
±40

A G = Gate

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Datasheet ID: IXFN32N80P 644283