IXFN150N10

IXFN150N10 Datasheet

IXFK100N10 IXFN150N10

Part	Datasheet
IXFN150N10	IXFN150N10 (pdf)

PDF Datasheet Preview
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK100N10 IXFN150N10 100 V 100 A 100 V 150 A trr 200 ns R DS on 12 mW 12 mW TO-264 AA IXFK VDSS VDGR VGS VGSM ID25 ID120 I EAR dv/dt Tstg TL VISOL Weight V DSS VGH th IGSS IDSS RDS on Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MW Continuous Transient TC = 25°C TC = 120°C, limited by external leads 25°C, pulse width limited = 25°C TC = 25°C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150°C, RG = 2 W TC = 25°C mm in from case for 10 s 50/60 Hz, RMS t = 1 min ISOL t=1s Mounting torque Terminal connection torque Maximum Ratings IXFK IXFN ±20 ±20 ±30

PDF Datasheet Preview

HiPerFETTM Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr

IXFK100N10 IXFN150N10
100 V 100 A
100 V 150 A
trr 200 ns

R DS on
12 mW 12 mW

TO-264 AA IXFK

VDSS VDGR VGS VGSM ID25 ID120 I

EAR dv/dt

Tstg TL VISOL

Weight

V DSS

VGH th IGSS IDSS

RDS on

Test Conditions

TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MW

Continuous

Transient

TC = 25°C

TC = 120°C, limited by external leads
25°C,
pulse
width
limited
= 25°C

TC = 25°C

IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150°C, RG = 2 W

TC = 25°C
mm in from case for 10 s
50/60 Hz, RMS t = 1 min

ISOL
t=1s

Mounting torque Terminal connection torque

Maximum Ratings

IXFK

IXFN
±20
±20
±30

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Datasheet ID: IXFN150N10 644273