IXFT30N60Q
IXFT30N60Q Datasheet
IXFH 30N60Q IXFT 30N60Q
| Part | Datasheet |
|---|---|
IXFT30N60Q |
IXFT30N60Q (pdf) |
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| HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet IXFH 30N60Q IXFT 30N60Q VDSS ID25 RDS on = 600 V = 30 A = trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight VDSS VGS th IGSS IDSS RDS on Test Conditions TTJJ = 25°C to 150°C = 25°C to 150°C RGS = 1 Continuous Transient TTCC = 25°C = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C mm in from case for 10 s Mounting torque TO-247 TO-247 TO-268 Maximum Ratings ±20 ±30 V/ns -55 +150 -55 +150 Nm/lb.in. Test Conditions Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. TVeGSmp=e0raVtu, rIeD = 250µA Coefficient VDS = VGS, ID = 4 mA Temperature Coefficient VGS = ±20 VDC, VDS = 0 |
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