IXFF24N100
IXFF24N100 Datasheet
IXFF 24N100
| Part | Datasheet |
|---|---|
IXFF24N100 |
IXFF24N100 (pdf) |
| PDF Datasheet Preview |
|---|
| HiPerFETTM Power MOSFET in High Voltage ISOPLUS i4-PACTM IXFF 24N100 ID25 = 22 A VDSS = 1000 V RDSon = 390 mΩ MOSFET Symbol VDSS VGS ID25 ID90 IF25 IF90 dv/dt R DSon VGSth IDSS Qgs Q td on tr t d off tf VF trr R thJC Conditions Maximum Ratings t• HiPerFETTM technology - low RDSon - low gate charge for high frequency TVJ = 25°C to 150°C 1000 ±20 operation - unclamped inductive switching UIS capability TC = 25°C TC = 90°C o diode TC = 25°C diode TC = 90°C - VDS < VDSS IF 100A/µs RG = 2 Ω TVJ = 150°C e TC = 25°C 22 A 15 A 120 A 75 A 5 V/ns 64 mJ a s Conditions Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. ID90 h VDS = 20 V ID = 8 mA; VDS = VDSS VGS = 0 V TVJ = 25°C pTVJ = 125°C 390 mΩ voltage pins - application friendly pinout - high reliability - industry standard outline • switched mode power supplies • DC-DC converters • resonant converters V = ±20 V = 0 V 200 nA |
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