IXFH320N10T2
IXFH320N10T2 Datasheet
IXFH320N10T2 IXFT320N10T2
| Part | Datasheet |
|---|---|
IXFH320N10T2 |
IXFH320N10T2 (pdf) |
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| Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET IXFH320N10T2 IXFT320N10T2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS on 100V 320A 3.5mΩ TO-247 IXFH VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C Chip Capability Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS IDM, VDD VDSS, TJ 175°C TC = 25°C 1.6mm 0.062in. from Case for 10s Plastic Body for 10 seconds Mounting Torque TO-247 TO-247 TO-268 Test Conditions TJ = 25°C Unless Otherwise Specified BVDSS VGS = 0V, ID = 1mA VGS th VDS = VGS, ID = 250uA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150°C RDS on VGS = 10V, ID = 100A, Notes 1 & 2 Maximum Ratings ± 20 ± 30 V/ns 1000 -55 +175 -55 +175 Nm/lb.in. Characteristic Values Min. Typ. Max. ±200 nA 25 uA mA |
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