IXFT74N20Q
IXFT74N20Q Datasheet
IXFH/IXFT 68N20 IXFH/IXFT 74N20
| Part | Datasheet |
|---|---|
IXFT74N20Q |
IXFT74N20Q (pdf) |
| PDF Datasheet Preview |
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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFT 68N20 IXFH/IXFT 74N20 VDSS ID25 RDS on 200 V 68 A 35 mW 200 V 74 A 30 mW trr 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight VDSS VGS th IGSS I DSS RDS on Test Conditions Maximum Ratings TO-247 AD IXFH TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150°C, RG = 2 W TC = 25°C mm in. from case for 10 s Mounting torque ±20 ±30 68N20 74N20 68N20 74N20 68N20 74N20 V/ns -55 +150 -55 +150 Nm/lb.in. Test Conditions Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V 200 2 TJ = 25°C TJ = 125°C VGS= 10 V, ID = ID25 74N20 68N20 Pulse test, t 300 ms, duty cycle d 2 % ±100 nA 200 mA 1 mA 30 m W 35 m W TO-268 D3 IXFT G = Gate, S = Source, |
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