IXFT40N30Q TR
IXFT40N30Q TR Datasheet
IXFH40N30Q IXFT40N30Q
| Part | Datasheet |
|---|---|
IXFT40N30Q TR |
IXFT40N30Q TR (pdf) |
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| HiPerFETTM Power MOSFETs Q-Class Not for New Designs IXFH40N30Q IXFT40N30Q VDSS = 300V ID25 = 40A RDS on 85mΩ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS IDM, VDD VDSS, TJ 150°C TC = 25°C 1.6mm 0.062in. from Case for 10s Plastic Body for 10 seconds Mounting Torque TO-247 TO-268 TO-247 Maximum Ratings ± 20 ± 30 -55 +150 -55 +150 300 260 / 10 4 6 V/ns °C °C °C °C °C Nm/lb.in. Test Conditions TJ = 25°C Unless Otherwise Specified BVDSS VGS = 0V, ID = 250uA VGS th VDS = VGS, ID = 4mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125°C RDS on VGS = 10V, ID = • ID25, Note 1 Characteristic Values Min. Typ. Max. ±100 nA |
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