IXFQ12N80P

IXFQ12N80P Datasheet

IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS

Part	Datasheet
IXFQ12N80P	IXFQ12N80P (pdf)

Related Parts	Information
IXFV12N80PS	IXFV12N80PS
IXFV12N80P	IXFV12N80P

PDF Datasheet Preview
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS VDSS = 800 V ID25 = 12 A RDS on Ω 250 ns TO-247 IXFH Test Conditions Maximum Ratings V DSS VDGR VGSM ID25 IDM IAR E = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C = 25°C TC = 25°C TO-3P IXFQ ±30 ±40 mJ PLUS220 IXFV D TAB D TAB dv/dt TJM Tstg TL TSOLD Md FC Weight IS IDM, di/dt 100 A/us, VDD VDSS, 150°C, TC = 25°C 360 -55 +150 150 -55 +150 V/ns D TAB °C °C PLUS220 SMD IXFV...S °C mm in. from case for 10 s Plastic body for 10 s Mounting torque TO-247, TO-3P Nm/lb.in.

PDF Datasheet Preview

PolarHVTM HiPerFET Power MOSFET

N-Channel Enhancement Mode

IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS

VDSS = 800 V

ID25 = 12 A

RDS on Ω
250 ns

TO-247 IXFH

Test Conditions

Maximum Ratings

V DSS

VDGR

VGSM

ID25 IDM IAR E
= 25°C to 150°C

TJ = 25°C to 150°C RGS = 1 MΩ

Continuous

Tranisent

TC = 25°C TC = 25°C, pulse width limited by TJM

TC = 25°C
= 25°C

TC = 25°C

TO-3P IXFQ
±30
±40
mJ PLUS220 IXFV

D TAB D TAB
dv/dt

TJM Tstg TL TSOLD Md FC Weight

IS IDM, di/dt 100 A/us, VDD VDSS,
150°C,

TC = 25°C
360 -55 +150
150 -55 +150

V/ns

D TAB
°C °C PLUS220 SMD IXFV...S °C
mm in. from case for 10 s

Plastic body for 10 s

Mounting torque TO-247, TO-3P

Nm/lb.in.

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Datasheet ID: IXFQ12N80P 644246