IXFT52N30Q TRL

IXFT52N30Q TRL Datasheet

IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q

Part	Datasheet
IXFT52N30Q TRL	IXFT52N30Q TRL (pdf)

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Preliminary data IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q VDSS = 300 V ID25 = 52 A = RDS on 60 mW 250 ns Symbol VDSS VDGR VGS VGSM I IDM I EAR EAS dv/dt TJM Tstg TL Md Weight V DSS VGS th IGSS IDSS RDS on Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MW Continuous Transient = 25°C, Chip capability TC = 25°C, pulse width limited by TJM = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150°C, RG = 2 W TC = 25°C mm in from case for 10 s Mounting torque TO-247 TO-264 TO-247 TO-264 TO-268 Maximum Ratings ±20 ±30 V/ns TO-247 AD IXFH TO-268 D3 IXFT G S -55 +150 -55 +150 Nm/lb.in. Nm/lb.in. TO-264 AA IXFK D TAB

PDF Datasheet Preview

HiPerFETTM Power MOSFETs

Q-Class

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances

Preliminary data

IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q

VDSS = 300 V

ID25 = 52 A
= RDS on 60 mW
250 ns

Symbol VDSS VDGR VGS VGSM I

IDM I

EAR EAS dv/dt

TJM Tstg TL Md

Weight

V DSS

VGS th IGSS IDSS

RDS on

Test Conditions

TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MW

Continuous Transient
= 25°C, Chip capability

TC = 25°C, pulse width limited by TJM
= 25°C

TC = 25°C TC = 25°C

IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150°C, RG = 2 W

TC = 25°C
mm in from case for 10 s

Mounting torque

TO-247 TO-264

TO-247 TO-264 TO-268

Maximum Ratings
±20
±30

V/ns

TO-247 AD IXFH

TO-268 D3 IXFT G S
-55 +150
-55 +150

Nm/lb.in. Nm/lb.in.

TO-264 AA IXFK

D TAB

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Datasheet ID: IXFT52N30QTRL 644242