IXEN60N120D1

IXEN60N120D1 Datasheet

IXEN 60N120 IXEN 60N120D1

Part	Datasheet
IXEN60N120D1	IXEN60N120D1 (pdf)

Related Parts	Information
IXEN60N120	IXEN60N120

PDF Datasheet Preview
NPT3 IGBT in miniBLOC package IXEN 60N120 IXEN 60N120D1 IC25 = 100 A VCES = 1200 V VCE sat typ. = V E IXEN 60N120 miniBLOC, SOT-227 B E153432 E IXEN 60N120D1 C = Collector G = Gate E = Emitter * * Either Emitter terminal can be used as Main or Kelvin Emitter IGBT Symbol VCES VGES IC25 IC90 ICM VCEK t SCSOA Ptot VCE sat V GE th ICES IGES t tr td off tf Eon Eoff Cies QGon R thJC Conditions Maximum Ratings tFeatures • NPT3 IGBT - low saturation voltage TVJ = 25°C to 150°C 1200 ± 20 u TC = 25°C TC = 90°C o VGE = ±15 V RG = 22 TVJ = 125°C - RBSOA, Clamped inductive load L = 100 µH VCES ±15 125°C e non-repetitive TC = 25°C a s Conditions Characteristic Values - positive temperature coefficient for easy paralleling

PDF Datasheet Preview

NPT3 IGBT
in miniBLOC package

IXEN 60N120 IXEN 60N120D1

IC25
= 100 A

VCES
= 1200 V

VCE sat typ. = V

E IXEN 60N120
miniBLOC, SOT-227 B

E153432

E IXEN 60N120D1

C = Collector G = Gate E = Emitter *
* Either Emitter terminal can be used as Main or Kelvin Emitter

IGBT

Symbol VCES VGES IC25 IC90 ICM VCEK t

SCSOA Ptot

VCE sat

V GE th

ICES

IGES t
tr td off tf Eon Eoff Cies QGon R
thJC

Conditions

Maximum Ratings
tFeatures
• NPT3 IGBT - low saturation voltage

TVJ = 25°C to 150°C
1200
± 20
u TC = 25°C

TC = 90°C
o VGE = ±15 V RG = 22 TVJ = 125°C - RBSOA, Clamped inductive load L = 100 µH

VCES
±15
125°C
e non-repetitive

TC = 25°C
a s Conditions

Characteristic Values
- positive temperature coefficient for easy paralleling

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Datasheet ID: IXEN60N120D1 644238