GWM120-0075P3

GWM120-0075P3 Datasheet

GWM 120-0075P3

Part	Datasheet
GWM120-0075P3	GWM120-0075P3 (pdf)

Related Parts	Information
GWM120-0075P3-SMD	GWM120-0075P3-SMD
GWM120-0075P3-SL	GWM120-0075P3-SL
GWM120-0075P3-SMD SAM	GWM120-0075P3-SMD SAM

PDF Datasheet Preview
Three phase full Bridge with Trench MOSFETs in DCB isolated high current package GWM 120-0075P3 VDSS = 75 V ID25 = 118 A R = DSon typ. mW MOSFETs Symbol Conditions VDSS VGS TVJ = 25°C to 150°C ID25 TC = 25°C ID90 TC = 90°C IF25 TC = 25°C diode IF90 TC = 90°C diode Maximum Ratings ± 20 118 A 85 A 120 A 78 A RDSon VGS th IDSS IGSS Qg Qgs Qgd td on tr td off tf Eon Eoff Erecoff RthJC RthJH Conditions Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. on chip level at VGS = 10 ID = 60 A VDS = 20 V ID = 1 mA VDS = VDSS VGS = 0 V VGS = ± 20 V VDS = 0 V TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C VGS = 10 V VDS = 55 V ID = 125 A VGS = 10 V VDS = 30 V ID = 80 A RG = 39 inductive load with heat transfer paste IXYS test setup 100 19 28 80 510 100 1 µA mA K/W K/W Bent leads Ordering Part Name & Packing Unit Marking Standard GWM 120-0075P3 - SL Standard GWM 120-0075P3 - SMD Standard GWM 120-0075P3 - BL Part Marking Delivering Mode GWM 120-0075P3 GWM 120-0075P3 GWM 120-0075P3 Blister Base Qty. 36 Ordering Code 502 843 502 850 contact factory IXYS reserves the right to change limits, test conditions and dimensions. 2008 IXYS All rights reserved 20081126f VDSS [V] Normalized IDSS = mA -25 0 25 50 75 100 125 150 TJ [°C] Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TVJ 300 VGS= 20 V 250 15 V 10 V 7 V 6V TJ = 25°C V 5V 100 VDS [V] Fig. 3 Typical output characteristic ID [A] VGE = 10 V ID = 125 A RDS on RDS on normalized RDS on normalized -25 0 25 50 75 100 125 150 TJ [°C] Fig. 5 Drain source on-state resistance RDS on versus junction temperature TJ IXYS reserves the right to change limits, test conditions and dimensions. 2008 IXYS All rights reserved RDS on [mΩ] RDS ON - Normalized ID [A] ID - [A] GWM 120-0075P3 250 VDS = 30 V 50 TJ = 125°C TJ = 25°C 0 01234567 VGS [V] Fig. 2 Typical transfer characteristic VGS = 20 V 15 V 200 V TJ = 125°C VDS [V] Fig. 4 Typical output characteristic

PDF Datasheet Preview

Three phase full Bridge
with Trench MOSFETs in DCB isolated high current package

GWM 120-0075P3

VDSS = 75 V

ID25
= 118 A

R = DSon typ. mW

MOSFETs

Symbol Conditions

VDSS VGS

TVJ = 25°C to 150°C

ID25

TC = 25°C

ID90

TC = 90°C

IF25

TC = 25°C diode

IF90

TC = 90°C diode

Maximum Ratings
± 20
118 A 85 A
120 A 78 A

RDSon

VGS th IDSS

IGSS Qg Qgs Qgd td on tr td off tf Eon Eoff Erecoff RthJC RthJH

Conditions

Characteristic Values TVJ = 25°C, unless otherwise specified
min. typ. max.
on chip level at VGS = 10 ID = 60 A VDS = 20 V ID = 1 mA VDS = VDSS VGS = 0 V

VGS = ± 20 V VDS = 0 V

TVJ = 25°C TVJ = 125°C

TVJ = 25°C TVJ = 125°C

VGS = 10 V VDS = 55 V ID = 125 A

VGS = 10 V VDS = 30 V ID = 80 A RG = 39 inductive load
with heat transfer paste IXYS test setup
100 19 28 80
510 100
1 µA mA

K/W K/W

Bent leads
Ordering

Part Name & Packing Unit Marking

Standard GWM 120-0075P3 - SL

Standard GWM 120-0075P3 - SMD

Standard GWM 120-0075P3 - BL

Part Marking Delivering Mode

GWM 120-0075P3 GWM 120-0075P3 GWM 120-0075P3

Blister

Base Qty. 36
Ordering Code
502 843
502 850
contact factory

IXYS reserves the right to change limits, test conditions and dimensions. 2008 IXYS All rights reserved
20081126f

VDSS [V] Normalized

IDSS = mA
-25 0 25 50 75 100 125 150

TJ [°C]

Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TVJ
300 VGS= 20 V
250 15 V 10 V
7 V 6V

TJ = 25°C V
5V 100

VDS [V]

Fig. 3 Typical output characteristic

ID [A]

VGE = 10 V ID = 125 A

RDS on

RDS on normalized

RDS on normalized
-25 0 25 50 75 100 125 150

TJ [°C]

Fig. 5 Drain source on-state resistance RDS on versus junction temperature TJ

IXYS reserves the right to change limits, test conditions and dimensions. 2008 IXYS All rights reserved

RDS on [mΩ]

RDS ON - Normalized

ID [A]

ID - [A]

GWM 120-0075P3
250 VDS = 30 V
50 TJ = 125°C TJ = 25°C
0 01234567 VGS [V] Fig. 2 Typical transfer characteristic

VGS =
20 V 15 V
200 V

TJ = 125°C

VDS [V]

Fig. 4 Typical output characteristic

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived GWM120-0075P3 Datasheet file may be downloaded here without warranties.

Datasheet ID: GWM120-0075P3 644214