FII24N17AH1

FII24N17AH1 Datasheet

FII24N17AH1

Part	Datasheet
FII24N17AH1	FII24N17AH1 (pdf)

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Advance Technical Data FII24N17AH1 High Voltage IGBT Phase-Leg FII24N170AH1 ISOPLUS i4-PACTM Package IC25 = 18 A VCES = 1700 V VCE sat = V IGBT Symbol VCES VGES VGEM IC25 IC90 ICM RBSOA Conditions TVJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 90°C VGE = +15 V RG = 5 TVJ = 125°C Clamped inductive load Vclamp = 1360V TC = 25°C Maximum Ratings 1700 ± 20 ± 30 Conditions Characteristic Values TVJ = 25°C unless otherwise specified min. typ. max. VCE sat IC = 16 A VGE = 15 V TVJ = 125°C VGE th IC = 250 µA VGE = VCE ICES VCE = VCES VGE = 0 V TVJ = 125°C 100 µA mA IGES VCE = 0 V VGE = ± 20 V ±100 nA td on tr td off tf Eoff Inductive load VCE = 600 V IC = 24 A VGE = ±15 V RG = 39 td on tr td off tf Eon Eoff Inductive load, TVJ = 125°C VCE = 600 V IC = 24 A VGE = ±15 V RG = 39 Note All characteristic values and ratings refer to a single IGBT or diode except VCES, ICES and Coes. z NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits z ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered, E 72873 z Single phaseleg - buck-boost chopper z H-bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier z Three phase bridge - AC drives - controlled rectifier IXYS reserves the right to change limits, test conditions and dimensions. 2005 IXYS All rights reserved DS99231A 08/05

PDF Datasheet Preview

Advance Technical Data

FII24N17AH1

High Voltage IGBT Phase-Leg

FII24N170AH1

ISOPLUS i4-PACTM Package

IC25 = 18 A VCES = 1700 V VCE sat = V

IGBT

Symbol VCES VGES VGEM IC25 IC90 ICM RBSOA

Conditions TVJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 90°C

VGE = +15 V RG = 5 TVJ = 125°C Clamped inductive load Vclamp = 1360V TC = 25°C

Maximum Ratings
1700
± 20
± 30

Conditions

Characteristic Values

TVJ = 25°C unless otherwise specified min. typ. max.

VCE sat

IC = 16 A VGE = 15 V TVJ = 125°C

VGE th

IC = 250 µA VGE = VCE

ICES

VCE = VCES VGE = 0 V

TVJ = 125°C
100 µA mA

IGES

VCE = 0 V VGE = ± 20 V
±100 nA
td on tr td off tf Eoff

Inductive load VCE = 600 V IC = 24 A VGE = ±15 V RG = 39
td on tr td off tf Eon Eoff

Inductive load, TVJ = 125°C VCE = 600 V IC = 24 A VGE = ±15 V RG = 39

Note All characteristic values and ratings refer to a single IGBT or diode except VCES, ICES and Coes.
z NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits
z ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered, E 72873
z Single phaseleg - buck-boost chopper
z H-bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier
z Three phase bridge - AC drives - controlled rectifier

IXYS reserves the right to change limits, test conditions and dimensions.
2005 IXYS All rights reserved

DS99231A 08/05

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FII24N17AH1 Datasheet file may be downloaded here without warranties.

Datasheet ID: FII24N17AH1 644205