IPG20N06S3L-35
IPG20N06S3L-35 Datasheet
IPG20N06S3L-35
| Part | Datasheet |
|---|---|
IPG20N06S3L-35 |
IPG20N06S3L-35 (pdf) |
| PDF Datasheet Preview |
|---|
| Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product RoHS compliant • 100% Avalanche tested IPG20N06S3L-35 Product Summary 5 DS on ,max 55 V 35 20 A PG-TDSON-8-4 Type IPG20N06S3L-35 Package Marking PG-TDSON-8-4 3N06L35 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Conditions Continuous drain current one channel active T C=25 °C, V GS=10 V1 Pulsed drain current2 one channel active Avalanche energy, single pulse2, 5 Avalanche current, single pulse5 Gate source voltage4 Power dissipation one channel active T C=100 °C, V GS=10 V2 I D,pulse - E AS I AS V GS I D=10A - P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category DIN IEC 68-1 - Value Unit ±16 -55 +175 55/175/56 2008-09-23 IPG20N06S3L-35 Parameter Conditions Thermal characteristics2 Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3 min. |
| More datasheets: TLE9833QXXUMA1 | TLE9833QXXUMA2 | CA3102R28-12PW | DCMM21HA4SNA101 | AT88CKECC-AWS-XSTK-B | APTM50AM25FTG | LTL-1CHEE | CA3102R18-4SF80 | RP8600B2M1CEBLKSIL | BT800-ST-01-T/R |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IPG20N06S3L-35 Datasheet file may be downloaded here without warranties.