DSEP30-04A

DSEP30-04A Datasheet

DSEP 30-04A

Part	Datasheet
DSEP30-04A	DSEP30-04A (pdf)

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DSEP 30-04A HiPerFREDTM Epitaxial Diode with soft recovery Preliminary Data IFAV = 30 A VRRM = 400 V trr = 30 ns VRSM V VRRM V Type DSEP 30-04A TO-247 AD C TAB Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 140°C rectangular, d = TVJ = 45°C tp = 10 ms 50 Hz , sine TVJ = 25°C non-repetitive IAS = tbd A L = tbd µH VA = 1.5•VR typ. f = 10 kHz repetitive TC = 25°C mounting torque typical Maximum Ratings RthJC RthCH trr Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 30 A TVJ = 150°C TVJ = 25°C IF = 1 A -di/dt = 300 A/ms VR = 30 V TVJ = 25°C VR = 100 V IF = 50 A -diF/dt = 100 A/ms TVJ = 100°C Characteristic Values typ. max. Pulse test x Pulse Width = 5 ms, Duty Cycle < % y Pulse Width = 300 ms, Duty Cycle < % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. 2000 IXYS All rights reserved A = Anode, C = Cathode, TAB = Cathode q International standard package q Planar passivated chips q Very short recovery time q Extremely low switching losses q Low IRM-values q Soft recovery behaviour q Epoxy meets UL 94V-0 q Antiparallel diode for high frequency switching devices q Antisaturation diode q Snubber diode q Free wheeling diode in converters and motor control circuits q Rectifiers in switch mode power supplies SMPS q Inductive heating q Uninterruptible power supplies UPS q Ultrasonic cleaners and welders Advantages q Avalanche voltage rated for reliable operation q Low IRM reduces - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf DSEP 30-04A 70 A 60 IF 50 40 30

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DSEP 30-04A

HiPerFREDTM Epitaxial Diode
with soft recovery

Preliminary Data

IFAV = 30 A VRRM = 400 V trr = 30 ns

VRSM V

VRRM V

Type DSEP 30-04A

TO-247 AD

C TAB

Symbol IFRMS IFAVM

IFSM EAS

IAR TVJ TVJM Tstg Ptot Md Weight

Conditions

TC = 140°C rectangular, d =

TVJ = 45°C tp = 10 ms 50 Hz , sine TVJ = 25°C non-repetitive IAS = tbd A L = tbd µH VA = 1.5•VR typ. f = 10 kHz repetitive

TC = 25°C mounting torque typical

Maximum Ratings

RthJC RthCH trr

Conditions

TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 30 A TVJ = 150°C

TVJ = 25°C

IF = 1 A -di/dt = 300 A/ms VR = 30 V TVJ = 25°C VR = 100 V IF = 50 A -diF/dt = 100 A/ms TVJ = 100°C

Characteristic Values typ. max.

Pulse test x Pulse Width = 5 ms, Duty Cycle < % y Pulse Width = 300 ms, Duty Cycle < %

Data according to IEC 60747 and per diode unless otherwise specified

IXYS reserves the right to change limits, test conditions and dimensions.
2000 IXYS All rights reserved

A = Anode, C = Cathode, TAB = Cathode
q International standard package q Planar passivated chips q Very short recovery time q Extremely low switching losses q Low IRM-values q Soft recovery behaviour q Epoxy meets UL 94V-0
q Antiparallel diode for high frequency switching devices
q Antisaturation diode q Snubber diode q Free wheeling diode in converters
and motor control circuits q Rectifiers in switch mode power
supplies SMPS q Inductive heating q Uninterruptible power supplies UPS q Ultrasonic cleaners and welders

Advantages
q Avalanche voltage rated for reliable operation
q Low IRM reduces - Power dissipation within the diode - Turn-on loss in the commutating switch

Dimensions see outlines.pdf

DSEP 30-04A
70 A 60

IF 50 40 30

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Datasheet ID: DSEP30-04A 644183