MMPQ2907

MMPQ2907 Datasheet

MMPQ2907

Part	Datasheet
MMPQ2907	MMPQ2907 (pdf)

PDF Datasheet Preview
MMPQ2907 MMPQ2907 B4 E4 SOIC-16 C2 C1 pin #1 C1 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range 40 60 600 -55 to +150 These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die MMPQ2907 1,000 125 240 Device mounted on FR-4 PCB 36 mm X 18 mm X mm mounting pad for the collector lead min. 6 cm2. *Device mounted on FR-4 PCB X Units V mA °C Units mW/°C °C/W °C/W °C/W 2001 Fairchild Semiconductor Corporation MMPQ2907 PNP General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V BR CEO V BR CBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage

PDF Datasheet Preview

MMPQ2907

MMPQ2907

B4 E4

SOIC-16

C2 C1 pin #1 C1

PNP General Purpose Amplifier

This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

VCEO VCBO VEBO IC TJ, Tstg

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
40 60 600 -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

Effective 4 Die

Each Die

MMPQ2907 1,000
125 240
*Device mounted on FR-4 PCB 36 mm X 18 mm X mm mounting pad for the collector lead min. 6 cm2. **Device mounted on FR-4 PCB X

Units

V mA °C

Units
mW/°C °C/W °C/W °C/W
2001 Fairchild Semiconductor Corporation

MMPQ2907

PNP General Purpose Amplifier
continued

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V BR CEO V BR CBO

Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MMPQ2907 Datasheet file may be downloaded here without warranties.

Datasheet ID: MMPQ2907 634411