DSEP 30-03A
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DSEP30-03A (pdf) |
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DSEP 30-03A HiPerFREDTM Epitaxial Diode with soft recovery VRSM VRRM Type DSEP 30-03A IFAV = 30 A VRRM = 300 V trr = 30 ns TO-247 AD C TAB A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 135°C rectangular, d = TVJ = 45°C tp = 10 ms 50 Hz , sine TVJ = 25°C non-repetitive IAS = 3 A L = 180 µH VA = 1.5•VR typ. f = 10 kHz repetitive TC = 25°C mounting torque typical Maximum Ratings Conditions VR = VRRM TVJ = 25°C VR = VRRM TVJ = 150°C IF = 30 A TVJ = 150°C TVJ = 25°C RthJC RthCH IF = 1 A -di/dt = 200 A/µs; VR = 30 V TVJ = 25°C VR = 100 V IF = 50 A -diF/dt = 100 A/µs TVJ = 100°C Pulse test Pulse Width = 5 ms, Duty Cycle < % Pulse Width = 300 µs, Duty Cycle < % Characteristic Values typ. max. Data according to IEC 60747 and per diode unless otherwise specified. • International standard package • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • Epoxy meets UL 94V-0 • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies SMPS • Inductive heating • Uninterruptible power supplies UPS • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see pages Outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions 2004 IXYS All rights reserved DSEP 30-03A |
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