DSEP30-03A

DSEP30-03A Datasheet


DSEP 30-03A

Part Datasheet
DSEP30-03A DSEP30-03A DSEP30-03A (pdf)
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DSEP 30-03A

HiPerFREDTM Epitaxial Diode
with soft recovery

VRSM

VRRM

Type

DSEP 30-03A

IFAV = 30 A VRRM = 300 V trr = 30 ns

TO-247 AD

C TAB

A = Anode, C = Cathode, TAB = Cathode

Symbol IFRMS IFAVM

IFSM EAS

IAR TVJ TVJM Tstg Ptot Md Weight

Conditions

TC = 135°C rectangular, d =

TVJ = 45°C tp = 10 ms 50 Hz , sine TVJ = 25°C non-repetitive IAS = 3 A L = 180 µH VA = 1.5•VR typ. f = 10 kHz repetitive

TC = 25°C mounting torque typical

Maximum Ratings

Conditions

VR = VRRM TVJ = 25°C VR = VRRM TVJ = 150°C

IF = 30 A TVJ = 150°C TVJ = 25°C

RthJC RthCH

IF = 1 A -di/dt = 200 A/µs;

VR = 30 V TVJ = 25°C

VR = 100 V IF = 50 A -diF/dt = 100 A/µs

TVJ = 100°C

Pulse test Pulse Width = 5 ms, Duty Cycle < % Pulse Width = 300 µs, Duty Cycle < %

Characteristic Values typ. max.

Data according to IEC 60747 and per diode unless otherwise specified.
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
• Antiparallel diode for high frequency switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies SMPS
• Inductive heating
• Uninterruptible power supplies UPS
• Ultrasonic cleaners and welders

Advantages
• Avalanche voltage rated for reliable operation
- Power dissipation within the diode - Turn-on loss in the commutating switch

Dimensions see pages Outlines.pdf

IXYS reserves the right to change limits, test conditions and dimensions 2004 IXYS All rights reserved

DSEP 30-03A
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Datasheet ID: DSEP30-03A 644181