DSEE29-06CC

DSEE29-06CC Datasheet

DSEE29-06CC

Part	Datasheet
DSEE29-06CC	DSEE29-06CC (pdf)

PDF Datasheet Preview
ADVANCE TECHNICAL INFORMATION DSEE29-06CC HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface IFAV = 30 A VRRM = 600 V trr = 30 ns VRRMc V VRRM V Type DSEE29-06CC ISOPLUS 220 E153432 Conditions Maximum Ratings Isolated back surface* IFRMS IFAVM c IFSM EAS IAR TVJ TVJM Tstg TL Ptot VISOL FC Weight TC = 115°C rectangular, d = TVJ = 45°C tp = 10 ms 50 Hz , sine TVJ = 25°C non-repetitive IAS = 3 A L = 180 µH VA = 1.5•VR typ. f = 10 kHz repetitive 60 30 200 z Silicon chip on Direct-Copper-Bond substrate - High power dissipation i- Isolated mounting surface - 2500V electrical isolation z Low cathode to tab capacitance <15pF e°C z Planar passivated chips d°C z Very short recovery time mm in from case for 10 s w TC = 25°C e 50/60 Hz RMS IISOL 1 mA n Mounting force typical 2500 / N / lb for Conditions t TVJ = 25°C VR = VRRM No TVJ = 150°C VR = VRRMe Characteristic Values typ. max. z Extremely low switching losses z Low IRM-values z Soft recovery behaviour z Epoxy meets UL 94V-0 z Antiparallel diode for high frequency switching devices z Antisaturation diode z Snubber diode z Free wheeling diode in converters and motor control circuits z Rectifiers in switch mode power supplies SMPS z Inductive heating IF = 30 A; TVJ = 125°C TVJ = 25°C V z Uninterruptible power supplies UPS V z Ultrasonic cleaners and welders RthJC RthCH trr IF = 1 A -di/dt = 200 A/µs;

PDF Datasheet Preview

ADVANCE TECHNICAL INFORMATION

DSEE29-06CC

HiPerDynFREDTM Epitaxial Diode

ISOPLUS220TM

Electrically Isolated Back Surface

IFAV = 30 A VRRM = 600 V trr = 30 ns

VRRMc V

VRRM V

Type DSEE29-06CC

ISOPLUS 220 E153432

Conditions

Maximum Ratings

Isolated back surface*

IFRMS IFAVM c IFSM EAS

IAR TVJ TVJM Tstg TL Ptot VISOL FC Weight

TC = 115°C rectangular, d = TVJ = 45°C tp = 10 ms 50 Hz , sine TVJ = 25°C non-repetitive IAS = 3 A L = 180 µH VA = 1.5•VR typ. f = 10 kHz repetitive
60 30 200
z Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
i- Isolated mounting surface
- 2500V electrical isolation z Low cathode to tab capacitance <15pF
e°C z Planar passivated chips
d°C z Very short recovery time
mm in from case for 10 s
w TC = 25°C e 50/60 Hz RMS IISOL 1 mA n Mounting force
typical
2500
/ N / lb
for Conditions t TVJ = 25°C VR = VRRM No TVJ = 150°C VR = VRRMe

Characteristic Values typ. max.
z Extremely low switching losses z Low IRM-values z Soft recovery behaviour z Epoxy meets UL 94V-0
z Antiparallel diode for high frequency switching devices
z Antisaturation diode z Snubber diode z Free wheeling diode in converters
and motor control circuits z Rectifiers in switch mode power
supplies SMPS z Inductive heating

IF = 30 A;

TVJ = 125°C TVJ = 25°C

V z Uninterruptible power supplies UPS

V z Ultrasonic cleaners and welders

RthJC RthCH trr

IF = 1 A -di/dt = 200 A/µs;

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Datasheet ID: DSEE29-06CC 644170