MAGX-001220-100L00

MAGX-001220-100L00 Datasheet

MAGX-001220-100L00

Part	Datasheet
MAGX-001220-100L00	MAGX-001220-100L00 (pdf)

Related Parts	Information
MAGX-001220-SB1PPR	MAGX-001220-SB1PPR

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MAGX-001220-100L00 GaN on SiC HEMT Pulsed Power Transistor 100 W Peak, to GHz, 300 us Pulse, 10% Duty • GaN on SiC Depletion-Mode HEMT Transistor • Common-Source Configuration • Broadband Class AB Operation • Thermally Enhanced Cu/Mo/Cu Package • RoHS* Compliant • +50 V Typical Operation • MTTF = 600 Years TJ < 200°C • EAR99 Export Classification • MSL-1 • General Purpose for Pulsed or CW Applications • Commercial Wireless Infrastructure WCDMA, LTE, WIMAX • Civilian and Military Radar • Military and Commercial Communications • Public Radio • Industrial, Scientific, and Medical • SATCOM • Instrumentation • DTV Ordering Information MAGX-001220-100L00 MAGX-001220-SB1PPR 100 W GaN Power Transistor GHz Evaluation Board The MAGX-001220-100L00 is a gold metalized Gallium Nitride GaN on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-001220-100L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAGX-001220-100L00 GaN on SiC HEMT Pulsed Power Transistor 100 W Peak, to GHz, 300 us Pulse, 10% Duty Electrical Specifications Freq. = - GHz, TA = +25°C Parameter Min. Typ. Max. RF Functional Tests PIN = 4 W, VDD = 50 V, IDQ = 500 mA, Pulse Width = 300 µs, Duty = 10% Peak Output Power POUT Power Gain Drain Efficiency Load Mismatch Stability VSWR-S Load Mismatch Tolerance VSWR-T 10:1 Units W dB % - Electrical Characteristics TA = +25°C Parameter Test Conditions DC Characteristics Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VGS = -8 V, VDS = 175 V VDS = 5 V, ID = 15 mA VDS = 5 V, ID = A IDS VGS TH Dynamic Characteristics Not Applicable Input Matched VDS = 50 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz CISS COSS CRSS Min. N/A - Typ.

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MAGX-001220-100L00

GaN on SiC HEMT Pulsed Power Transistor 100 W Peak, to GHz, 300 us Pulse, 10% Duty
• GaN on SiC Depletion-Mode HEMT Transistor
• Common-Source Configuration
• Broadband Class AB Operation
• Thermally Enhanced Cu/Mo/Cu Package
• RoHS* Compliant
• +50 V Typical Operation
• MTTF = 600 Years TJ < 200°C
• EAR99 Export Classification
• MSL-1
• General Purpose for Pulsed or CW Applications
• Commercial Wireless Infrastructure

WCDMA, LTE, WIMAX
• Civilian and Military Radar
• Military and Commercial Communications
• Public Radio
• Industrial, Scientific, and Medical
• SATCOM
• Instrumentation
• DTV
Ordering Information

MAGX-001220-100L00 MAGX-001220-SB1PPR
100 W GaN Power Transistor

GHz Evaluation Board

The MAGX-001220-100L00 is a gold metalized Gallium Nitride GaN on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-001220-100L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

For further information and support please visit:

MAGX-001220-100L00

GaN on SiC HEMT Pulsed Power Transistor 100 W Peak, to GHz, 300 us Pulse, 10% Duty

Electrical Specifications Freq. = - GHz, TA = +25°C

Parameter

Min.

Typ.

Max.

RF Functional Tests PIN = 4 W, VDD = 50 V, IDQ = 500 mA, Pulse Width = 300 µs, Duty = 10%

Peak Output Power

POUT

Power Gain

Drain Efficiency

Load Mismatch Stability

VSWR-S

Load Mismatch Tolerance

VSWR-T
10:1

Units

W dB % -

Electrical Characteristics TA = +25°C

Parameter

Test Conditions

DC Characteristics

Drain-Source Leakage Current Gate Threshold Voltage

Forward Transconductance

VGS = -8 V, VDS = 175 V VDS = 5 V, ID = 15 mA VDS = 5 V, ID = A

IDS VGS TH

Dynamic Characteristics

Not Applicable Input Matched VDS = 50 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz

CISS COSS CRSS

Min.

N/A -

Typ.

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Datasheet ID: MAGX-001220-100L00 646885