DSEC60-04A

DSEC60-04A Datasheet

DSEC 60-04A

Part	Datasheet
DSEC60-04A	DSEC60-04A (pdf)

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DSEC 60-04A HiPerFREDTM Epitaxial Diode with common cathode and soft recovery Preliminary Data IFAV = 2x30 A VRRM = 400 V trr = 30 ns VRSM V Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight RthJC RthCH trr VRRM V Type A TO-247 AD DSEC 60-04A C TAB A = Anode, C = Cathode, TAB = Cathode Conditions TC = 140°C rectangular, d = TVJ = 45°C tp = 10 ms 50 Hz , sine TVJ = 25°C non-repetitive IAS = tbd A L = tbd µH VA = 1.5•VR typ. f = 10 kHz repetitive TC = 25°C mounting torque n Maximum Ratings si tbd de tbd • International standard package • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • Epoxy meets UL 94V-0 ne0.8...1.2 • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits typical r Conditions fo TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 30 A TVJ = 150°C NotTVJ = 25°C IF = 1 A -di/dt = 300 A/µs; Characteristic Values typ. max. • Rectifiers in switch mode power supplies SMPS • Inductive heating • Uninterruptible power supplies UPS • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Low IRM reduces - Power dissipation within the diode - Turn-onlossinthecommutatingswitch VR = 30 V TVJ = 25°C VR = 100 V IF = 50 A -diF/dt = 100 A/µs Dimensions see Outlines.pdf

PDF Datasheet Preview

DSEC 60-04A

HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery

Preliminary Data

IFAV = 2x30 A VRRM = 400 V trr = 30 ns

VRSM V

Symbol IFRMS IFAVM

IFSM EAS

IAR TVJ TVJM Tstg Ptot Md Weight

RthJC RthCH trr

VRRM V

Type

A TO-247 AD

DSEC 60-04A

C TAB

A = Anode, C = Cathode, TAB = Cathode

Conditions

TC = 140°C rectangular, d = TVJ = 45°C tp = 10 ms 50 Hz , sine TVJ = 25°C non-repetitive IAS = tbd A L = tbd µH VA = 1.5•VR typ. f = 10 kHz repetitive

TC = 25°C mounting torque
n Maximum Ratings
si tbd
de tbd
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
ne0.8...1.2
• Antiparallel diode for high frequency switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
typical
r Conditions fo TVJ = 25°C VR = VRRM

TVJ = 150°C VR = VRRM IF = 30 A TVJ = 150°C

NotTVJ = 25°C

IF = 1 A -di/dt = 300 A/µs;

Characteristic Values typ. max.
• Rectifiers in switch mode power supplies SMPS
• Inductive heating
• Uninterruptible power supplies UPS
• Ultrasonic cleaners and welders

Advantages
• Avalanche voltage rated for reliable operation
• Low IRM reduces - Power dissipation within the diode - Turn-onlossinthecommutatingswitch

VR = 30 V TVJ = 25°C

VR = 100 V IF = 50 A -diF/dt = 100 A/µs

Dimensions see Outlines.pdf

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Datasheet ID: DSEC60-04A 644168