SS150TA60110, SS150TC60110, SS150TI60110
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SS150TA60110 (pdf) |
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SS150TI60110 |
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SS150TC60110 |
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SS150TA60110, SS150TC60110, SS150TI60110 Silicon Carbide Schottky Diode Part Number SS150TA60110 SS150TC60110 SS150TI60110 VRRM V 600 IF AVG A Configuration 10 Triple Common Anode 10 Triple Common Cathode 10 Triple Independent Triple Anode TA Triple Cathode TC Triple Independent TI VRRM IF AVG CJ = 600 V = 10 A = 120 pF A = Anode C = Cathode Symbol Parameter per diode Test Conditions Maximum Ratings VRRM VRSM VDC IF AVG IFRM IFSM TVJ DC Blocking Voltage Average Forward Current TJ = 175°C Repetitive Peak Forward Surge Current TC = 25°C, tP = 10 ms Half Sine Wave Non-Repetitive Peak Forward Surge Current TC = 25°C, tP = 10 µs Pulse Operating Virtual Junction Temperature 600 V 600 V 600 V 10 A 67 A 250 A -55 to +175 °C TSTG PTOT Storage Temperature TC = 25 °C 30 W/ per diode -55 to +175 °C 90 W • MHz Switch Mode Power Supplies • High Frequency Converters • Resonant Converters • Rectifier Circuits Symbol Parameter TJ = 25°C unless otherwise specified Forward Voltage Junction Capacitance QC RTHJC TL Isolation Weight Capacitive Charge Thermal Resistance Lead Soldering Temperature Pin to Substrate Pin to Pin Test Conditions IF = 5 A, TJ = 25°C TJ = 175°C |
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