APTM120DDA57T3G

APTM120DDA57T3G Datasheet

APTM120DDA57T3G

Part	Datasheet
APTM120DDA57T3G	APTM120DDA57T3G (pdf)

PDF Datasheet Preview
APTM120DDA57T3G Dual Boost chopper MOSFET Power Module VDSS = 1200V RDSon = typ Tj = 25°C ID = 17A Tc = 25°C 13 14 23 8 Q1 31 R1 32 16 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 14 13 10 11 12 All multiple inputs and outputs must be shorted together Example 13/14 29/30 22/23 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS IDM VGS RDSon Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance 1200 Tc = 25°C Tc = 80°C ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 3000 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTM120DDA57T3G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IDSS Zero Gate Voltage Drain Current RDS on VGS th IGSS

PDF Datasheet Preview

APTM120DDA57T3G

Dual Boost chopper MOSFET Power Module

VDSS = 1200V RDSon = typ Tj = 25°C ID = 17A Tc = 25°C
13 14
23 8 Q1
31 R1
32 16

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction

Features
• Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
• Kelvin source for easy drive
• Very low stray inductance - Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32
14 13 10 11 12

All multiple inputs and outputs must be shorted together Example 13/14 29/30 22/23

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a single boost of twice the current capability
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings Unit

VDSS

IDM VGS RDSon

Drain - Source Breakdown Voltage

Continuous Drain Current

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance
1200

Tc = 25°C

Tc = 80°C
±30

PD Maximum Power Dissipation

Tc = 25°C

IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy
3000

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on

APTM120DDA57T3G

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

IDSS Zero Gate Voltage Drain Current

RDS on VGS th IGSS

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived APTM120DDA57T3G Datasheet file may be downloaded here without warranties.

Datasheet ID: APTM120DDA57T3G 648872