IXZH10N50L2B

IXZH10N50L2B Datasheet

IXZH10N50L2A & IXZH10N50L2B RF Power MOSFET

Part	Datasheet
IXZH10N50L2B	IXZH10N50L2B (pdf)

Related Parts	Information
IXZH10N50L2A	IXZH10N50L2A

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IXZH10N50L2A & IXZH10N50L2B RF Power MOSFET N-channel enhancement mode linear RF power MOSFET Ideal for class AB and C industrial, scientific, medical, and commercial applications. • Isolated Substrate high isolation voltage >2500V excellent thermal transfer Increased temperature and power cycling capability • IXYS RF Low Capacitance Z-MOSTM Process • Very low insertion inductance <2nH • No beryllium oxide BeO or other hazardous materials Advantages • High Performance RF Package • Easy to insulators needed VDSS = 500 V ID25 = 10 A TO-247AD Maximum Ratings Symbol Parameter VDSS VDGR VGS VGSM ID25 PDC PDHS PDAMB RthJC RthJHS Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Package power dissipation per MOSFET Dissipation to heat-sink per MOSFET Ambient power dissipation Thermal resistance junction to case Thermal resistance junction to heat-sink TJ, TSTG Operating and storage junction temperature range Lead temperature Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient Tc = 25°C Tc = 25°C Tc = 25°C, Derate 2 W/°C above 25°C TAMB = 25°C 1.6mm 0.063 in from case for 10 s Electrical Characteristics Maximum Units 500 V ±20 ±30 ° C/W -55 to 150 °C 300 Symbol Parameter Test Conditions Static BVDSS IDSS IGSS gfs VGS th Breakdown voltage drain to source Drain leakage current Gate leakage current Transconductance Threshold voltage VGS = 0 V, ID = 4 ma VDS = 0.8VDSS VGS= 0 TJ = 25C TJ =125C VGS = ±20 VDC, VDS = 0 VDS = 60 V, ID = 0.5ID25, pulse test VDS = VGS, ID =

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IXZH10N50L2A & IXZH10N50L2B RF Power MOSFET

N-channel enhancement mode linear RF power MOSFET

Ideal for class AB and C industrial, scientific, medical, and commercial applications.
• Isolated Substrate high isolation voltage >2500V excellent thermal transfer Increased temperature and power cycling
capability
• IXYS RF Low Capacitance Z-MOSTM Process
• Very low insertion inductance <2nH
• No beryllium oxide BeO or other
hazardous materials

Advantages
• High Performance RF Package
• Easy to insulators needed

VDSS = 500 V ID25 = 10 A

TO-247AD

Maximum Ratings

Symbol Parameter

VDSS VDGR VGS VGSM ID25 PDC PDHS PDAMB RthJC RthJHS

Drain-source voltage Drain-gate voltage

Gate-source voltage

Continuous drain current Package power dissipation per MOSFET Dissipation to heat-sink per MOSFET Ambient power dissipation Thermal resistance junction to case Thermal resistance junction to heat-sink

TJ, TSTG Operating and storage junction temperature range

Lead temperature

Test Conditions

TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient Tc = 25°C Tc = 25°C Tc = 25°C, Derate 2 W/°C above 25°C TAMB = 25°C
1.6mm 0.063 in from case for 10 s

Electrical Characteristics

Maximum Units
500 V
±20
±30
° C/W
-55 to 150
°C 300

Symbol Parameter

Test Conditions

Static

BVDSS IDSS IGSS gfs VGS th

Breakdown voltage drain to source Drain leakage current Gate leakage current Transconductance Threshold voltage

VGS = 0 V, ID = 4 ma

VDS = 0.8VDSS VGS= 0

TJ = 25C TJ =125C

VGS = ±20 VDC, VDS = 0

VDS = 60 V, ID = 0.5ID25, pulse test

VDS = VGS, ID =

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Datasheet ID: IXZH10N50L2B 644352