CPC3703C

CPC3703C Datasheet

CPC3703C

Part	Datasheet
CPC3703C	CPC3703C (pdf)

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CPC3703C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 250V RDS ON max IDSS min 300mA Package SOT-89 • Depletion mode device offers low RDS ON at cold temperatures • Low on resistance 4 ohms max. at 25oC • High input impedance • High breakdown voltage 250V • Low VGS off voltage to -3.9V • Small package size SOT-89 • Ignition modules • Normally-on switches • Solid state relays • Converters • Telecommunications • Power supply The CPC3703C is an N-channel depletion mode field effect transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. Third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device for high power applications with high input impedance. The CPC3703C is a highly reliable FET device that has been used extensively in Clare’s solid state relays for industrial and telecommunications applications. This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3703C offers a low 4 ohm maximum on-state resistance at 25oC. The CPC3703C has a minimum breakdown voltage of 250V and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Package Pinout SOT-89 Ordering Information Part # CPC3703C CPC3703CTR Description SOT-89 100/Tube SOT-89 2000/Reel Switching Waveforms and Test Circuit 0V INPUT -10V OUTPUT 0V td ON t OFF td OFF PULSE GENERATOR Rgen INPUT DS-CPC3703C-R02.3 VDD RL OUTPUT D.U.T. CPC3703C Absolute Maximum Ratings Parameter Drain-to-Source Voltage Gate-to-Source Voltage Total Package Dissipation Operational Temperature Storage Temperature Soldering Temperature 10 seconds Max Ratings 250 ±20 -55 to +125 -55 to +125 +220 Units V W oC Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Thermal Characteristics Package ID continuous ID pulsed SOT-89 360mA 600mA Power Dissipation 1.6W oC/W IDR 360mA IDRM 600mA Electrical Characteristics unless otherwise specified Parameter Conditions Drain-to-Source Breakdown Voltage

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CPC3703C

N-Channel Depletion-Mode Vertical DMOS FETs

BVDSX/ BVDGX
250V

RDS ON max

IDSS min
300mA

Package SOT-89
• Depletion mode device offers low RDS ON at cold temperatures
• Low on resistance 4 ohms max. at 25oC
• High input impedance
• High breakdown voltage 250V
• Low VGS off voltage to -3.9V
• Small package size SOT-89
• Ignition modules
• Normally-on switches
• Solid state relays
• Converters
• Telecommunications
• Power supply

The CPC3703C is an N-channel depletion mode field effect transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. Third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device for high power applications with high input impedance. The CPC3703C is a highly reliable FET device that has been used extensively in Clare’s solid state relays for industrial and telecommunications applications.

This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3703C offers a low 4 ohm maximum on-state resistance at 25oC.

The CPC3703C has a minimum breakdown voltage of 250V and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.

Package Pinout

SOT-89
Ordering Information

Part # CPC3703C

CPC3703CTR

Description SOT-89 100/Tube

SOT-89 2000/Reel

Switching Waveforms and Test Circuit
0V INPUT
-10V

OUTPUT 0V
td ON
t OFF
td OFF

PULSE GENERATOR

Rgen

INPUT

DS-CPC3703C-R02.3

VDD RL OUTPUT D.U.T.

CPC3703C

Absolute Maximum Ratings

Parameter Drain-to-Source Voltage Gate-to-Source Voltage Total Package Dissipation Operational Temperature Storage Temperature Soldering Temperature 10 seconds Max

Ratings 250 ±20
-55 to +125 -55 to +125
+220

Units V W oC

Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied.

Thermal Characteristics

Package

ID continuous

ID pulsed

SOT-89
360mA
600mA

Power Dissipation 1.6W
oC/W

IDR 360mA

IDRM 600mA

Electrical Characteristics unless otherwise specified

Parameter

Conditions

Drain-to-Source

Breakdown Voltage

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Datasheet ID: CPC3703C 523317