AO4420A

AO4420A Datasheet


AO4420A

Part Datasheet
AO4420A AO4420A AO4420A (pdf)
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AO4420A
30V N-Channel MOSFET

The AO4420A uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications.

Product Summary

VDS V = 30V ID = 13.7A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V
100% UIS Tested 100% Rg Tested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain TA=25°C

Current AF

TA=70°C

Pulsed Drain Current B

Avalanche Current B

Repetitive avalanche energy L=0.3mH B

Power Dissipation

TA=25°C TA=70°C

Junction and Storage Temperature Range TJ, TSTG

Maximum 30 ±12 60 20 60 2
-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
t 10s Steady-State
28 54
40 75

Maximum Junction-to-Lead C

Steady-State

Units V

A mJ W °C

Units °C/W °C/W °C/W

Alpha & Omega Semiconductor, Ltd.

AO4420A

Electrical Characteristics TJ=25°C unless otherwise noted

Parameter

Conditions

Min Typ Max Units
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Datasheet ID: AO4420A 516163