AO4420A
Part | Datasheet |
---|---|
![]() |
AO4420A (pdf) |
PDF Datasheet Preview |
---|
AO4420A 30V N-Channel MOSFET The AO4420A uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. Product Summary VDS V = 30V ID = 13.7A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.3mH B Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 60 20 60 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 28 54 40 75 Maximum Junction-to-Lead C Steady-State Units V A mJ W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4420A Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions Min Typ Max Units |
More datasheets: 6202T5-5V | 6202T3-5V | CDBMHT150-HF | CDBMHT180-HF | CDBMHT130-HF | CDBMHT120-HF | SW6WFAS-50 | AK40G | CY2VC521ZXC-2 | CY2VC521ZXC-2T |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AO4420A Datasheet file may be downloaded here without warranties.