IRGS4615DPbF IRGB4615DPbF
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IRGS4615DTRLPBF (pdf) |
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IRGS4615DTRRPBF |
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IRGB4615DPBF |
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IRGS4615DPBF |
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IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 15A, TC = 100°C tsc > 5µs, Tjmax = 175°C VCE on typ. = 1.55V 8A Applications • Appliance Drives • Inverters • UPS n-channel Gate D2-Pak IRGS4615DPbF C o lle c to r TO-220AB IRGB4615DPbF Em itter Low VCE ON and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and higher power capability Positive VCE ON temperature coefficient and tighter distribution of Excellent current sharing in parallel operation parameters 5us short circuit SOA Enables short circuit protection scheme Lead-free, RoHS compliant Environmentally friendly Base part number IRGS4615DPbF IRGS4615DTRRPbF IRGS4615DTRLPbF IRGB4615DPbF Package Type D2 PAK TO-220AB Standard Pack Form Tube Tape and Reel Right Tape and Reel Left Tube Quantity 50 800 50 Orderable Part Number IRGS4615DPbF IRGS4615DTRRPbF IRGS4615DTRLPbF IRGB4615DPbF Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Breakdown Voltage TC = 25°C Continuous Collector Current TC = 100°C Continuous Collector Current Pulsed Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current Diode Continuous Forward Current |
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