IRGBC40S

IRGBC40S Datasheet

IRGBC40S

Part	Datasheet
IRGBC40S	IRGBC40S (pdf)

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INSULATED GATE BIPOLAR TRANSISTOR PD - 9.690A IRGBC40S Standard Speed IGBT • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency curve n-channel Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. VCES = 600V VCE sat 1.8V = 15V, IC = 31A Absolute Maximum Ratings VCES IC TC = 25°C IC TC = 100°C ICM ILM VGE EARV PD TC = 25°C PD TC = 100°C TJ TSTG TO-220AB Max. 600 50 31 240 100 ±20 15 160 65 -55 to +150 300 in. 1.6mm from case 10 lbf•in 1.1N•m Units V A V mJ W Thermal Resistance Parameter Junction-to-Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-15 Min. Typ. Max. 80 Units °C/W g oz IRGBC40S Electrical Characteristics TJ = 25°C unless otherwise specified Parameter V BR CES Collector-to-Emitter Breakdown Voltage V BR ECS Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage VCE on Collector-to-Emitter Saturation Voltage VGE th Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance ICES Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current Min. 600 20 12 Typ. Max. Units V/°C V mV/°C 21 S 250 µA 1000 ±100 nA

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INSULATED GATE BIPOLAR TRANSISTOR

PD - 9.690A

IRGBC40S

Standard Speed IGBT
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation to 400 Hz

See Fig. 1 for Current vs. Frequency curve
n-channel

Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.

VCES = 600V VCE sat 1.8V
= 15V, IC = 31A

Absolute Maximum Ratings

VCES IC TC = 25°C IC TC = 100°C ICM ILM VGE EARV PD TC = 25°C PD TC = 100°C TJ TSTG

TO-220AB

Max. 600 50 31 240 100 ±20 15 160 65 -55 to +150
300 in. 1.6mm from case 10 lbf•in 1.1N•m

Units V A

V mJ W

Thermal Resistance

Parameter Junction-to-Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight

C-15

Min.

Typ.

Max. 80

Units °C/W g oz

IRGBC40S

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter

V BR CES Collector-to-Emitter Breakdown Voltage

V BR ECS Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage

VCE on

Collector-to-Emitter Saturation Voltage

VGE th

Gate Threshold Voltage

Temp. Coeff. of Threshold Voltage

Forward Transconductance

ICES

Zero Gate Voltage Collector Current

IGES

Gate-to-Emitter Leakage Current

Min. 600 20 12

Typ. Max. Units V/°C V mV/°C 21 S 250 µA 1000 ±100 nA

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Datasheet ID: IRGBC40S 639065