SPB10N10

SPB10N10 Datasheet

SPB10N10

Part	Datasheet
SPB10N10	SPB10N10 (pdf)

Related Parts	Information
SPB10N10 G	SPB10N10 G

PDF Datasheet Preview
Power-Transistor Feature N-Channel Enhancement mode operating temperature Avalanche rated dv/dt rated SPB10N10 Product Summary 100 V RDS on 170 m P-TO263-3-2 Type SPB10N10 Package Ordering Code P-TO263-3-2 Q67042-S4119 Marking 10N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Pulsed drain current ID puls TC=25°C Avalanche energy, single pulse ID=10.3 A , VDD=25V, RGS=25 dv/dt IS=10.3A, VDS=80V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 Ptot Tj , Tstg Value ±20 50 +175 55/175/56 Unit A mJ kV/µs V W °C 2005-02-14 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area F SPB10N10 Values Unit min. typ. max. RthJC RthJA 3 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics

PDF Datasheet Preview

Power-Transistor

Feature N-Channel Enhancement mode operating temperature Avalanche rated dv/dt rated

SPB10N10

Product Summary
100 V

RDS on 170 m

P-TO263-3-2

Type SPB10N10

Package
Ordering Code

P-TO263-3-2 Q67042-S4119

Marking 10N10

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Parameter

Continuous drain current

TC=25°C

TC=100°C

Pulsed drain current

ID puls

TC=25°C

Avalanche energy, single pulse

ID=10.3 A , VDD=25V, RGS=25
dv/dt

IS=10.3A, VDS=80V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage

Power dissipation

TC=25°C

Operating and storage temperature IEC climatic category DIN IEC 68-1

Ptot Tj , Tstg

Value
±20 50
+175 55/175/56

Unit A
mJ kV/µs V W °C
2005-02-14

Thermal Characteristics Parameter

Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
min. footprint 6 cm2 cooling area F

SPB10N10

Values

Unit
min. typ. max.

RthJC RthJA
3 K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

Static Characteristics

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SPB10N10 Datasheet file may be downloaded here without warranties.

Datasheet ID: SPB10N10 638290