IRF7171MTRPBF
IRF7171MTRPBF Datasheet
FastIRFET IRF7171MTRPbF
| Part | Datasheet |
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IRF7171MTRPBF |
IRF7171MTRPBF (pdf) |
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| FastIRFET IRF7171MTRPbF Applications and Benefits Ideal for High Performance Isolated Converter Primary Switch Optimized for Synchronous Rectification RoHS Compliant, Halogen Free Lead-Free Qualified up to 260°C Reflow Low Conduction Losses High Cdv/dt Immunity Low Profile <0.7mm Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques Industrial Qualified Power MOSFET Typical values unless otherwise specified VDSS 100V min ±20V max RDS on Qg tot Vgs th 36nC 13nC 2.9V Applicable Outline and Substrate Outline DirectFET ISOMETRIC MN The IRF7171MTRPbF combines the latest Power MOSFET Silicon technology with the advanced packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only mm profile. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7171MTRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Ordering Information Base part number IRF7171MTRPbF Package Type Medium Can Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF7171MTRPbF Absolute Maximum Ratings Parameter VGS ID TC = 25°C ID TC = 100°C ID TA = 25°C IDM EAS Gate-to-Source Voltage Continuous Drain Current, VGS 10V Silicon Limited Continuous Drain Current, VGS 10V Silicon Limited Continuous Drain Current, VGS 10V Silicon Limited Pulsed Drain Single Pulse Avalanche Energy Avalanche Current Max. ±20 93 59 15 330 86 Units V RDS on , Drain-to -Source On Resistance Typical RDS on ID = 56A TJ = 125°C TJ = 25°C VGS = 6V VGS = 7V VGS = 8V VGS = 10V VGS = 12V 10 12 14 16 18 20 VGS, Gate -to -Source Voltage V Fig Typical On-Resistance vs. Gate Voltage Notes Click on this section to link to the appropriate technical paper. Click on this section to link to the Website. Surface mounted on 1 in. square Cu board, steady state. 1 2015 International Rectifier 25 50 75 100 125 150 175 200 ID, Drain Current A Fig Typical On-Resistance vs. Drain Current TC measured with thermocouple mounted to top Drain of part. Repetitive rating pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 55µH, RG = IAS = 56A. Submit Datasheet Feedback March 25, 2015 IRF7171MTRPbF Static TJ = 25°C unless otherwise specified Parameter BVDSS |
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