IRGB4064DPBF

IRGB4064DPBF Datasheet

IRGB4064DPbF

Part	Datasheet
IRGB4064DPBF	IRGB4064DPBF (pdf)

PDF Datasheet Preview
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • Low VCE on Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5µs SCSOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE on Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free Package Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE ON and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Low EMI PD - 97113 IRGB4064DPbF n-channel VCES = 600V IC = 10A, TC = 100°C tsc > 5µs, Tjmax = 175°C VCE on typ. = 1.6V Gate TO-220AB Collector Emitter Absolute Maximum Ratings Parameter VCES TC = 25°C TC = 100°C ICM ILM IFM Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current c Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current d Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD TC =25° PD TC =100° TJ TSTG Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 Screw Thermal Resistance Parameter Junction-to-Case - IGBT e Junction-to-Case - Diode e Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount e Weight Max. 600 20 10 40 20 10 40 ±20 ±30 101 50 -55 to + 175 Units V V W °C 300 in. 1.6mm from case 10 lbf•in N•m Min. Typ. Max. 62 Units °C/W 11/28/06 IRGB4064DPbF Electrical Characteristics TJ = 25°C unless otherwise specified V BR CES

PDF Datasheet Preview

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE
• Low VCE on Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE on Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package

Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE ON and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI

PD - 97113

IRGB4064DPbF
n-channel

VCES = 600V IC = 10A, TC = 100°C tsc > 5µs, Tjmax = 175°C

VCE on typ. = 1.6V

Gate

TO-220AB

Collector

Emitter

Absolute Maximum Ratings

Parameter

VCES TC = 25°C TC = 100°C ICM ILM IFM

Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current c Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current d

Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage

PD TC =25° PD TC =100° TJ TSTG

Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 Screw

Thermal Resistance

Parameter

Junction-to-Case - IGBT e

Junction-to-Case - Diode e

Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount e

Weight

Max. 600 20 10 40 20 10 40 ±20 ±30 101 50
-55 to + 175

Units V

V W °C
300 in. 1.6mm from case 10 lbf•in N•m

Min.

Typ.

Max. 62

Units °C/W
11/28/06

IRGB4064DPbF

Electrical Characteristics TJ = 25°C unless otherwise specified

V BR CES

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IRGB4064DPBF Datasheet file may be downloaded here without warranties.

Datasheet ID: IRGB4064DPBF 639057