IRGB4059DPBF
IRGB4059DPBF Datasheet
IRGB4059DPbF
| Part | Datasheet |
|---|---|
IRGB4059DPBF |
IRGB4059DPBF (pdf) |
| PDF Datasheet Preview |
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| INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • Low VCE on Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5µs SCSOA • Square RBSOA • 100% of The Parts Tested for 4X Rated Current ILM • Positive VCE on Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free Package Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE ON and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Low EMI Absolute Maximum Ratings Parameter VCES TC = 25°C TC = 100°C ICM ILM IFM Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current c Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current d Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD TC =25° PD TC =100° TJ TSTG Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter Junction-to-Case - IGBT e Junction-to-Case - Diode e Case-toSink, flat, greased surface Junction-to-Ambient, typical socket mount e Weight PD - 97072A IRGB4059DPbF n-channel VCES = 600V IC = 4.0A, TC = 100°C tsc > 5µs, Tjmax = 175°C VCE on typ. = 1.75V Gate TO-220AB Collector Emitter Max. 600 8 4 16 8 4 16 ± 20 ± 30 56 28 -55 to + 175 Units V V W °C 300 in. 1.6mm from case Min. Typ. Max. Units °C/W 4/14/06 IRGB4059DPbF Electrical Characteristics TJ = 25°C unless otherwise specified V BR CES Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Min. 600 |
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