SPP10N10
SPP10N10 Datasheet
SPI10N10 SPP10N10,SPB10N10
| Part | Datasheet |
|---|---|
SPP10N10 |
SPP10N10 (pdf) |
| Related Parts | Information |
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SPI10N10 |
SPI10N10 |
| PDF Datasheet Preview |
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| Target data sheet SPI10N10 SPP10N10,SPB10N10 • N-Channel • Enhancement mode •=175°C operating temperature • Avalanche rated P-TO262-3-1 • dv/dt rated Product Summary 100 V RDS on 180 P-TO263-3-2 P-TO220-3-1 Type SPP10N10 SPB10N10 SPI10N10 Package Ordering Code P-TO220-3-1 - P-TO263-3-2 - P-TO262-3-1 - Marking 10N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=10.3 A , VDD=25V, ID puls EAS dv/dt IS=10.3A, VDS=80V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 VGS Ptot Tj , Tstg Value ±20 50 +175 55/175/56 Unit A mJ kV/µs V W °C 2001-03-16 Thermal Characteristics Parameter Target data sheet Symbol Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 1 RthJC RthJA SPI10N10 SPP10N10,SPB10N10 Values Unit min. typ. max. 3 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values min. typ. max. Static Characteristics |
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