IRFR12N25DCTRLP
IRFR12N25DCTRLP Datasheet
IRFR12N25D
| Part | Datasheet |
|---|---|
IRFR12N25DCTRLP |
IRFR12N25DCTRLP (pdf) |
| Related Parts | Information |
|---|---|
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IRFR12N25DCTRRP |
IRFR12N25DCTRRP |
| PDF Datasheet Preview |
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| PD - 94296A SMPS MOSFET IRFR12N25D IRFU12N25D Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max 250V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001 l Fully Characterized Avalanche Voltage and Current D-Pak I-Pak IRFR12N25D IRFU12N25D Absolute Maximum Ratings ID TC = 25°C ID TC = 100°C IDM PD = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter Junction-to-Case Junction-to-Ambient PCB mount * Junction-to-Ambient Notes through are on page 10 Max. 14 56 144 ± 30 -55 to + 175 300 1.6mm from case Units W/°C V/ns Typ. Max. 50 110 Units °C/W 09/21/01 IRFR12N25D/IRFU12N25D Static TJ = 25°C unless otherwise specified Parameter Min. Typ. Max. Units Conditions V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS on Static Drain-to-Source On-Resistance VGS th |
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