IRF7707GTRPBF
IRF7707GTRPBF Datasheet
IRF7707GPbF
| Part | Datasheet |
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IRF7707GTRPBF |
IRF7707GTRPBF (pdf) |
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| l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile < 1.2mm l Available in Tape & Reel l Lead-Free l Halogen-Free PD- 96260 IRF7707GPbF Power MOSFET VDSS -20V RDS on max = -4.5V = -2.5V -7.0A -6.0A Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile <1.2mm allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB 'Ã2Ã9 &Ã2ÃT %Ã2ÃT TSSOP-8 Absolute Maximum Ratings VDS ID TA = 25°C ID TA = 70°C IDM PD = 25°C PD = 70°C VGS TJ , TSTG Parameter Drain-Source Voltage Continuous Drain Current, VGS -4.5V Continuous Drain Current, VGS -4.5V Pulsed Drain Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -28 ±12 -55 to +150 Units V W/°C V °C Thermal Resistance Parameter Maximum Junction-to-Ambient Max. 83 Units °C/W 07/10/09 IRF7707GPbF Electrical Characteristics TJ = 25°C unless otherwise specified Parameter Min. Typ. Max. Units Conditions V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS on Static Drain-to-Source On-Resistance -20 22 33 V/°C VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -4.5V, ID = -7.0A VGS = -2.5V, ID = -6.0A VGS th Gate Threshold Voltage |
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