IRF6628TR1PBF

IRF6628TR1PBF Datasheet

IRF6628PbF

Part	Datasheet
IRF6628TR1PBF	IRF6628TR1PBF (pdf)

Related Parts	Information
IRF6628TRPBF	IRF6628TRPBF

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PD - 97234 IRF6628PbF IRF6628TRPbF l RoHs Compliant l Lead-Free Qualified up to 260°C Reflow l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile <0.7mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET Power MOSFET Typical values unless otherwise specified VDSS RDS on RDS on 25V max ±20V max 10V 4.5V Qg tot Qgd Qgs2 Qoss Vgs th 31nC 12nC 4.1nC 26nC 21nC 1.9V DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline see p.7,8 for The IRF6628PbF combines the latest Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by The IRF6628PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6628PbF has been optimized for parameters that are critical in synchronous buck including Rds on , gate charge and Cdv/dt-induced turn on immunity. The IRF6628PbF offers particularly low Rds on and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Parameter Drain-to-Source Voltage VGS ID TA = 25°C ID TA = 70°C ID TC = 25°C IDM EAS IAR Gate-to-Source Voltage e Continuous Drain Current, VGS 10V e Continuous Drain Current, VGS 10V f Continuous Drain Current, VGS 10V g Pulsed Drain Current h Single Pulse Avalanche Energy Ãg Avalanche Current Max. 25 ±20 27 22 160 220 38 22 Units V Typical RDS on VGS, Gate-to-Source Voltage V 10 ID = 27A 4 TJ = 125°C 2 TJ = 25°C 0 3 4 5 6 7 8 9 10 11 VGS, Gate -to -Source Voltage V Fig Typical On-Resistance vs. Gate Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. VDS= 20V VDS= 13V VDS= 5.0V ID= 22A QG Total Gate Charge nC

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PD - 97234

IRF6628PbF

IRF6628TRPbF
l RoHs Compliant l Lead-Free Qualified up to 260°C Reflow l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile <0.7mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques

DirectFET Power MOSFET

Typical values unless otherwise specified

VDSS

RDS on

RDS on
25V max ±20V max 10V 4.5V

Qg tot Qgd

Qgs2

Qoss Vgs th
31nC 12nC 4.1nC 26nC 21nC 1.9V

DirectFET ISOMETRIC

Applicable DirectFET Outline and Substrate Outline see p.7,8 for

The IRF6628PbF combines the latest Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by

The IRF6628PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6628PbF has been optimized for parameters that are critical in synchronous buck including Rds on , gate charge and Cdv/dt-induced turn on immunity. The IRF6628PbF offers particularly low Rds on and high Cdv/dt immunity for synchronous FET applications.

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

VGS ID TA = 25°C ID TA = 70°C ID TC = 25°C IDM EAS IAR

Gate-to-Source Voltage
e Continuous Drain Current, VGS 10V e Continuous Drain Current, VGS 10V f Continuous Drain Current, VGS 10V g Pulsed Drain Current h Single Pulse Avalanche Energy Ãg Avalanche Current

Max. 25 ±20 27 22 160 220 38 22

Units V

Typical RDS on VGS, Gate-to-Source Voltage V
10 ID = 27A
4 TJ = 125°C
2 TJ = 25°C
0 3 4 5 6 7 8 9 10 11

VGS, Gate -to -Source Voltage V

Fig Typical On-Resistance vs. Gate Voltage

Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

VDS= 20V

VDS= 13V

VDS= 5.0V

ID= 22A

QG Total Gate Charge nC

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Datasheet ID: IRF6628TR1PBF 639034