SPB100N03S2-03 G
SPB100N03S2-03 G Datasheet
SPB100N03S2-03G
| Part | Datasheet |
|---|---|
SPB100N03S2-03 G |
SPB100N03S2-03 G (pdf) |
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| SPB100N03S2-03G OptiMOS TM Power-Transistor • N-Channel • Enhancement mode • Excellent Gate Charge x RDS on product FOM • Superior thermal resistance Product Summary RDS on max. SMD version 100 A P-TO263 -3 • 175°C operating temperature • Avalanche rated • dv/dt rated Halogen Free according to IEC61249-2-21 Type Package SPB100N03S2-03 P- TO263 -3 Marking PN0303 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80A, VDD=25V, IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value Unit kV/µs ±20 +175 55/175/56 2010-01-25 SPB100N03S2-03G Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: |
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