IRF6622TR1PBF

IRF6622TR1PBF Datasheet

IRF6622PbF

Part	Datasheet
IRF6622TR1PBF	IRF6622TR1PBF (pdf)

Related Parts	Information
IRF6622TRPBF	IRF6622TRPBF

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PD - 97244 IRF6622PbF IRF6622TRPbF l RoHs Compliant l Lead-Free Qualified up to 260°C Reflow l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile <0.7mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET Power MOSFET Typical values unless otherwise specified VDSS RDS on RDS on 25V max ±20V max 10V 4.5V Qg tot Qgd Qgs2 Qoss Vgs th 11nC 3.8nC 1.6nC 7.1nC 7.7nC 1.8V Applicable DirectFET Outline and Substrate Outline see p.7,8 for SQ MP DirectFET ISOMETRIC The IRF6622PbF combines the latest Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by The IRF6622PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6622PbF has been optimized for parameters that are critical in synchronous buck converter’s ControlFET sockets. Typical RDS on VGS, Gate-to-Source Voltage V Absolute Maximum Ratings Parameter Drain-to-Source Voltage VGS ID TA = 25°C ID TA = 70°C ID TC = 25°C IDM EAS IAR Gate-to-Source Voltage e Continuous Drain Current, VGS 10V e Continuous Drain Current, VGS 10V f Continuous Drain Current, VGS 10V g Pulsed Drain Current h Single Pulse Avalanche Energy Ãg Avalanche Current ID = 15A 15 10 TJ = 125°C TJ = 25°C VGS, Gate -to -Source Voltage V Fig Typical On-Resistance Vs. Gate Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. Max. 25 ±20 15 12 59 120 13 12 Units V VDS= 20V VDS= 13V VDS= 5.0V ID= 12A 8 10 12 14 QG Total Gate Charge nC

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PD - 97244

IRF6622PbF

IRF6622TRPbF
l RoHs Compliant l Lead-Free Qualified up to 260°C Reflow l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile <0.7mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques

DirectFET Power MOSFET

Typical values unless otherwise specified

VDSS

RDS on

RDS on
25V max ±20V max 10V 4.5V

Qg tot Qgd Qgs2

Qoss Vgs th
11nC 3.8nC 1.6nC 7.1nC 7.7nC 1.8V

Applicable DirectFET Outline and Substrate Outline see p.7,8 for

SQ MP

DirectFET ISOMETRIC

The IRF6622PbF combines the latest Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by

The IRF6622PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6622PbF has been optimized for parameters that are critical in synchronous buck converter’s ControlFET sockets.

Typical RDS on VGS, Gate-to-Source Voltage V

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

VGS ID TA = 25°C ID TA = 70°C ID TC = 25°C IDM EAS IAR

Gate-to-Source Voltage
e Continuous Drain Current, VGS 10V e Continuous Drain Current, VGS 10V f Continuous Drain Current, VGS 10V g Pulsed Drain Current h Single Pulse Avalanche Energy Ãg Avalanche Current

ID = 15A 15
10 TJ = 125°C

TJ = 25°C

VGS, Gate -to -Source Voltage V

Fig Typical On-Resistance Vs. Gate Voltage

Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

Max. 25 ±20 15 12 59 120 13 12

Units V

VDS= 20V

VDS= 13V

VDS= 5.0V

ID= 12A
8 10 12 14

QG Total Gate Charge nC

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Datasheet ID: IRF6622TR1PBF 639033