SPW17N80C3A
SPW17N80C3A Datasheet
SPW17N80C3
| Part | Datasheet |
|---|---|
SPW17N80C3A |
SPW17N80C3A (pdf) |
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| Final data Cool MOS Power Transistor SPW17N80C3 VDS RDS on 800 V 17 A P-TO247 Type SPW17N80C3 Package P-TO247 Ordering Code Q67040-S4359 Marking 17N80C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse ID = A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1 EAR ID = 17 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR dv/dt IS=17A, VDS=480V, Tj=125°C Gate source voltage Gate source voltage AC f >1Hz Power dissipation, TC = 25°C Operating and storage temperature VGS Ptot Tj , Tstg Value Unit V/ns ±20 ±30 +150 2003-07-03 Final data SPW17N80C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 640 V, ID = 17 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, mm in. from case for 10s RthJC RthJA Tsold Values Unit min. typ. max. - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified |
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