BSO080P03SNTMA1
BSO080P03SNTMA1 Datasheet
BSO080P03S
| Part | Datasheet |
|---|---|
BSO080P03SNTMA1 |
BSO080P03SNTMA1 (pdf) |
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| OptiMOS -P Power-Transistor Features • P-Channel • Enhancement mode • Logic level • 150°C operating temperature • Avalanche rated • dv /dt rated • Ideal for fast switching buck converter Product Summary V DS R DS on ,max ID BSO080P03S -30 V P-DSO-8 Type BSO080P03S Package P-DSO-8 Marking 080P3S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C1 T A=70 °C1 T A=25 °C2 Value Unit secs steady state Avalanche energy, single pulse I D=-14.9 A, R GS=25 dv /dt I D=-14.9 A, V DS=20 V, di /dt =-200 A/µs, T j,max=150 °C Gate source voltage Power dissipation V GS P tot T A=25 °C1 Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 kV/µs ±25 -55 150 55/150/56 2008-04-22 Parameter Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient Symbol Conditions BSO080P03S min. Values typ. Unit max. R thJS R thJA |
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