SPP80P06PBKSA1

SPP80P06PBKSA1 Datasheet

SPP80P06P SPB80P06P

Part	Datasheet
SPP80P06PBKSA1	SPP80P06PBKSA1 (pdf)

Related Parts	Information
SPB80P06P	SPB80P06P

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Preliminary data SPP80P06P SPB80P06P Power-Transistor Product Summary • P-Channel • Enhancement mode Drain source voltage -60 V W Drain-source on-state resistance RDS on • Avalanche rated • dv/dt rated Continuous drain current -80 A • 175°C operating temperature Type SPP80P06P SPB80P06P Package Ordering Code P-TO220-3-1 Q67042-S4017 P-TO263-3-2 Q67042-S4016 Pin 1 PIN 2/4 PIN 3 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC = 25 °C, 1 TC = 100 °C Pulsed drain current TC = 25 °C ID puls Avalanche energy, single pulse W ID = -80 A , VDD = -25 V, RGS = 25 EAR dv/dt IS = -80 A, VDS = -48 , di/dt = 200 A/µs, Tjmax = 175 °C Gate source voltage Power dissipation Ptot TC = 25 °C Operating and storage temperature IEC climatic category DIN IEC 68-1 Tj , Tstg Value -80 -64 -320 ±20 340 55/175/56 Unit A kV/µs V W °C 1Current limited by bondwire with an RthJC = K/W the chip is able to carry ID = -91A Page 1 1999-11-22 Preliminary data SPP80P06P SPB80P06P Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB min. footprint 6 cm2 cooling area 1 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max.

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Preliminary data

SPP80P06P SPB80P06P

Power-Transistor

Product Summary
• P-Channel
• Enhancement mode

Drain source voltage
-60 V

W Drain-source on-state resistance RDS on
• Avalanche rated
• dv/dt rated

Continuous drain current
-80 A
• 175°C operating temperature

Type SPP80P06P SPB80P06P
Package Ordering Code P-TO220-3-1 Q67042-S4017 P-TO263-3-2 Q67042-S4016

Pin 1 PIN 2/4 PIN 3

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Parameter

Continuous drain current

TC = 25 °C, 1

TC = 100 °C

Pulsed drain current TC = 25 °C

ID puls

Avalanche energy, single pulse

W ID = -80 A , VDD = -25 V, RGS = 25

EAR dv/dt

IS = -80 A, VDS = -48 , di/dt = 200 A/µs, Tjmax = 175 °C

Gate source voltage

Power dissipation

Ptot

TC = 25 °C

Operating and storage temperature IEC climatic category DIN IEC 68-1

Tj , Tstg

Value
-80 -64 -320
±20 340
55/175/56

Unit A
kV/µs

V W °C
1Current limited by bondwire with an RthJC = K/W the chip is able to carry ID = -91A Page 1
1999-11-22

Preliminary data

SPP80P06P SPB80P06P

Thermal Characteristics Parameter

Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB min. footprint 6 cm2 cooling area 1

Values

Unit
min. typ. max.

RthJC RthJA

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

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Datasheet ID: SPP80P06PBKSA1 638654