SPB73N03S2L08T
SPB73N03S2L08T Datasheet
SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08
| Part | Datasheet |
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SPB73N03S2L08T |
SPB73N03S2L08T (pdf) |
| Related Parts | Information |
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SPB73N03S2L-08 |
SPB73N03S2L-08 |
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SPP73N03S2L08XK |
SPP73N03S2L08XK |
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SPB73N03S2L-08 G |
SPB73N03S2L-08 G |
SPI73N03S2L-08 |
SPI73N03S2L-08 |
| PDF Datasheet Preview |
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| Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS on product FOM • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated P- TO262 -3-1 SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 Product Summary VDS RDS on ID 30 V 73 A P- TO263 -3-2 P- TO220 -3-1 Type SPP73N03S2L-08 SPB73N03S2L-08 SPI73N03S2L-08 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4037 Q67042-S4036 Q67042-S4081 Marking 2N03L08 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1 TC=25°C, 1 Pulsed drain current TC=25°C Avalanche energy, single pulse ID=73A, VDD=25V, IS=73A, VDS=24, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAR dv/dt VGS Ptot Tj , Tstg Value 73 62 320 ±20 107 +175 55/175/56 Unit A kV/µs V W °C 2003-04-24 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA |
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